DB3/DC34/DB4/DB6

R
DB3/DC34/DB4/DB6
SILICON BIDIRECTIONAL DIAC
S E M I C O N D U C T O R
DO-35(GLASS)
FEATURES
The three-layer, two-terminal, axial-lead, hermetically sealed diacs are
designed specifically for triggering thyristors. They demonstrate low breakover
current at breakover voltage as they withstand peak pulse current. The breakover
1.083(27.5)
MIN
symmetry is within three volts(DB3,DC34,DB4) or four volts(DB6). These diacs are
intended for use in thyrisitors phase control , circuits for lamp dimming, universal
0.079(2.0)
MAX
DIA
motor speed control and heat control.
JF's DB3/DC34/DB4/DB6 are bi-directional triggered diode designed to operate
0.150(3.8)
MAX
in conjunction with Triacs and SCR's
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
MECHANICAL DATA
1.083(27.5)
MIN
JF
Case: DO-35 glass case
0.020(0.52)
MAX
DIA
Weight: Approx. 0.13 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Dimensions in inches and (millimeters)
Value
Parameters
Symbols
Units
DB3
PC
Power Dissipation on Printed
Circuit(L=10mm)
TA=50 C
ITRM
Repetitive Peak on-state
Current
tp=10ms
f=100Hz
TSTG/TJ
DB4
DC34
DB6
mW
150
2.0
Storage and Operating Junction Temperature
2.0
2.0
1.6
A
C
-40 to+125/-40 to +110
ELECTRICAL CHARACTERISTICS
Value
Symbols
Parameters
Units
Test Condition
DB3
VBO
│+VBO││-VBO│
│+
V│
VO
IBO
tr
IB
DC34
DB4
DB6
35
40
45
56
60
70
V
+4
V
10
V
Breakover Voltage (Note 2 )
C=22nF(Note 2)
See diagram 1
Min
Typ
Max
Breakover Voltage Symmetry
C=22nF(Note 2)
See diagram 1
Max
+3
I=(IBO to IF=10mA)
See Diagram 1
Min
5
Output Voltage (Note 1 )
See Diagram 2
Min
5
V
Breakover Current (Note1)
C=22nF(Note 2)
Max
100
mA
See Diagram 3
Typ
1.5
ms
VB=0.5 VBO max
see diagram 1
Max
10
mA
Dynamic Breakover Voltage (Note1)
Rise Time (Note1)
Leakage Current (Note1)
28
32
36
30
34
38
Notes: 1.Electrical characteristics applicable in both forward and reverse directions.
2.Connected in parallel with the devices.
JINAN JINGHENG ELECTRONICS CO., LTD.
3-2
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTIC CURVES DB3/DC34/DB4/DB6
DIAGRAM 1: Current-voltage characteristics
DIAGRAM 2: Test circuit for output voltage
+IF
10KW
220V
50Hz
10mA
500KW
D.U.T
VO
R=20W
0.1mF
DIAGRAM 3: Test circuit see diagram2 adjust R for
IP=0.5A
IBO
IB
0.5 VBO
-V
+V
IP
90%
V
VBO
10%
-IF
tr
FIG.1-Power dissipation versus ambient
temperature (maximum values)
FIG.2-Relative variation of VBO versus junction
temperature(typical values)
P (mW)
160
VBO(TJ)
VBO(TJ=25 C)
140
120
1.08
100
80
1.06
60
40
Tamb( C)
20
1.04
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
1.02
FIG.3-Peak pulse current versus pulse duration
(maximum values)
TJ125
( C)
1.00
25
50
75
100
ITRM(A)
2
f=100Hz
TJ initial=25 C
1
0.1
tp(ms)
0.01
10
100
1000
10000
JINAN JINGHENG ELECTRONICS CO., LTD.
3-3
HTTP://WWW.JINGHENGGROUP.COM
125