R LL29 SMALL SIGNAL SCHOTTKY DIODES S E M I C O N D U C T O R FEATURES MiniMELF Metal-on-silicon junction Low turn-on voltage Ultrafast switching speed Primarily intended for high level UHF detection and pulse applications with broad dynamic range 0.063(1.6) 0.055(1.4) The diode is also available in the DO-35 case with type designation BAT29. High temperature soldering guaranteed:260℃/10 seconds at terminals Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 0.142(3.6) 0.134(3.4) 0.019(0.48) 0.011(0.28) MECHANICAL DATA Dimensions in inches and (millimeters) Case: MiniMELF glass case(SOD-80 ) Polarity: Color band denotes cathode end Weight: Approx. 0.05 gram ABSOLUTE RATINGS(LIMITING VALUES) Value Symbols VRRM Peak Reverse Voltage Forward Continuous Current Junction and Storage temperature range IF IFSM TSTG Junction temperature TJ Surge non repetitive Forward current tp 1S Units 5 V 30 mA A 2.0 -55 to+150 C 125 ℃ ELECTRICAL CHARACTERISTICS Min. Symbols Typ. Max. Unis Reverse breakover voltage at IR=100mA VR Leakage current at VR=1V IR 50 nA Forward voltage drop at IF=10mA Test pulse:tp 300ms d 2% VF 0.55 V Junction Capacitance at VR=0V ,f=1GHz Thermal resistance JINAN JINGHENG ELECTRONICS CO., LTD. V V 5 CJ 1.0 pF RqJA 400 K/W 2-44 HTTP://WWW.JINGHENGGROUP.COM RATINGS AND CHARACTERISTIC CURVES LL29 Figure 1. forward current versus forward voltage (typical values) Figure 2. Capacitance CJ versus reverse applied voltage VR (typical values) IF(mA) 10 CJ(pF) 2 1 Tamb= 25 C 0.8 10 0.6 1 0.4 Tamb=150 C Tamb= 25 C Tamb= -55 C 10 -1 0.2 10 -2 0 0.2 0.4 0.6 0.8 0 1 2 6 4 8 VR(V) 10 VF(V) Figure 3.Reverse current versus ambient temperature Figure 4.Reverse current versus continuous Reverse voltage(typical values) IR(mA) IR(mA) 10 10 90% confidence VR=1V 125 C 100 C max. typ. 1 1 75 C 10 -1 10 -2 10 -3 10 -1 10 -2 10 -3 50 C 25 C 0 25 50 75 100 125 0 1 2 3 84 5 VR(V) Tamb=( C) JINAN JINGHENG ELECTRONICS CO., LTD. 2-45 HTTP://WWW.JINGHENGGROUP.COM