LL5712

R
LL5712
SMALL SIGNAL SCHOTTKY DIODES
S E M I C O N D U C T O R
FEATURES
MiniMELF
Metal-on-silicon junction
High breakdown voltage
Low turn-on voltage
Ultrafast switching speed
0.063(1.6)
0.055(1.4)
Primarily intended for high level UHF/VHF detection and pulse applications
with broad dynamic range.
The diode is also available in the DO-35 case with type designation 1N5712.
0.019(0.48)
0.011(0.28)
0.142(3.6)
0.134(3.4)
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: MiniMELF glass case(SOD-80)
Weight: Approx. 0.05 gram
ABSOLUTE RATINGS(LIMITING VALUES)
VRRM
Peak Reverse Voltage
Ptot
IF
TA/TSTG
Power Dissipation (infinite Heat Sink)
Forward Continuous Current
Operation and storage temperature range
Units
Value
Symbols
20
V
430
35
mW
mA
-55 to+150
C
ELECTRICAL CHARACTERISTICS
Symbols
Reverse breakover voltage
at IR=10mA
Min.
VR
Typ.
Max.
Unis
V
20
Leakage current at VR=15V
IR
100
nA
Forward voltage drop
at IF=1mA
Test pulse:tp 300ms d 2% IF=35mA
VF
VF
0.41
1.0
V
V
Junction Capacitance at VR=0V ,f=1MHz
CJ
1.2
pF
RqJA
400
K/W
Thermal resistance
JINAN JINGHENG ELECTRONICS CO., LTD.
2-66
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTICS CURVES LL5712
Figure 1. forward current versus forward voltage
at different temperatures(typical values)
Figure 2. forward current versus forward voltage
(typical values)
IF(mA)
10
IF(mA)
2
30
Tamb= 25 C
25
10
20
15
1
Tamb=150 C
Tamb= 25 C
Tamb= -55 C
10
10
-1
5
10
-2
0
0.2
0.4
0.6
0.8
1
0
1.2
VF(V)
0.2
0.4
0.6
0.8
1
VF(V)
Figure 3.Reverse current versus ambient
temperature
IR(mA)
10
2
90% confidence
VR=15V
10
max.
typ.
1
10
-1
10
-2
10
-3
0
25
50
75
100
125
150
Tamb=( C)
JINAN JINGHENG ELECTRONICS CO., LTD.
2-67
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTICS CURVES LL5712
Figure 4.Reverse current versus continuous
Reverse voltage(typical values)
IR(mA)
10
2
150 C
10
125 C
100 C
1
75 C
10
-1
10
-2
10
-3
50 C
25 C
0
25
50
75
100
125
150
Figure 5.Capacitance CJ versus revers applied
voltage VR (typical values)
CJ(pF)
1.5
Tamb= 25 C
1.25
1
0.75
0.5
0.25
0
JINAN JINGHENG ELECTRONICS CO., LTD.
5
15
10
2-68
20
VR(V)
HTTP://WWW.JINGHENGGROUP.COM