LL45

R
LL45
SMALL SIGNAL SCHOTTKY DIODES
S E M I C O N D U C T O R
FEATURES
MiniMELF
Metal-on-silicon junction
Low turn-on voltage
Ultrafast switching speed
Primarily intended for high level UHF detection and pulse applications
0.063(1.6)
0.055(1.4)
with broad dynamic range
The diode is also available in the DO-35 case with type designation BAT45
High temperature soldering guaranteed:260℃/10 seconds at terminals
0.019(0.48)
0.011(0.28)
0.142(3.6)
0.134(3.4)
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
MECHANICAL DATA
Dimensions in inches and (millimeters)
Case: MiniMELF glass case(SOD-80 )
Weight: Approx. 0.05 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols
VRRM
Peak Reverse Voltage
IFSM
IF
TA/TSTG
Surge non repetitive Forward current tp 1S
Forward Continuous Current
Operation and storage temperature range
Value
Units
15
V
2.0
A
mA
30
-65 to+150
C
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Reverse breakover voltage
at IR=10mA
Leakage current at VR=6V
Forward voltage drop
Test pulse: tp≤300ms d ＜2%
at IF=1mA
IF=10mA
IF=30mA
Junction Capacitance at VR=1V ,f=1MHz
Thermal resistance
JINAN JINGHENG ELECTRONICS CO., LTD.
Symbols
Min.
VR
15
Typ.
Max.
Unis
V
IR
VF
VF
VF
CJ
100
nA
0.38
0.5
1
1.1
V
V
V
pF
RqJA
400
K/W
2-51
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTIC CURVES LL45
Figure 1. Forward current versus forward voltage
at different temperatures(typical values)
10
Figure 2. Capacitance CJ versus reverse applied
voltage VR (typical values)
CJ(pF)
2
1.5
Tamb= 25 C
10
1
1
10
-1
10
-2
5
Tamb=150 C
Tamb= 25 C
Tamb= -55 C
0
0.4
1.2
0.8
1.6
0
2.0
Figure 3.Reverse current versus ambient
temperature
2
4
6
8
10
VR(V)
Figure 4.Reverse current versus continuous
revers voltage (typical values)
IR(mA)
IR(mA)
125 C
10
10
90% confidence
VR=5V
100 C
1
75 C
1
max.
typ.
10
50 C
-1
25 C
10
10
-1
-2
0
25
50
75
100
10
-2
10
-3
0
125
5
10
15
VR(V)
Tamb=( C)
JINAN JINGHENG ELECTRONICS CO., LTD.
2-52
HTTP://WWW.JINGHENGGROUP.COM