RENESAS 2SK3151

2SK3151
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1076-0400
(Previous: ADE-208-747B)
Rev.4.00
Sep 07, 2005
Features
• Low on-resistance
RDS (on) = 11.5 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
1. Gate
2. Drain
(Flange)
3. Source
G
1
Rev.4.00 Sep 07, 2005 page 1 of 7
2
S
3
2SK3151
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note3
EAR Note3
Pch Note2
Tch
Tstg
Ratings
100
±20
50
200
50
50
250
125
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Note:
4. Pulse test
Rev.4.00 Sep 07, 2005 page 2 of 7
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
100
±20
—
—
1.0
—
—
30
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
11.5
16
50
4000
1650
590
30
280
830
450
0.95
100
Max
—
—
±10
10
2.5
15
25
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
V
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 100 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 25 A, VGS = 10 VNote4
ID = 25 A, VGS = 4 V Note4
ID = 25 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 25 A, VGS = 10 V,
RL = 1.2 Ω
IF = 50 A, VGS = 0
IF = 50 A, VGS = 0
diF/ dt = 50 A/ µs
2SK3151
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
Drain Current ID (A)
1000
120
80
40
50
40
50
100
150
0
100
DC
30
Op
1
=
s
10
m
s(
at
ion
Operation in
this area is
limited by RDS(on)
m
µs
µs
1
sh
ot
(T
c=
)
25
°C
)
Ta = 25°C
1
2
20
10
5
50 100 200
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
100
VGS = 10 V
Pulse Test
4V
3V
30
PW
er
10
200
10
10
1
0
Drain Current ID (A)
300
3
Drain Current ID (A)
Channel Dissipation Pch (W)
160
3.5 V
20
2.5 V
10
VDS = 10 V
Pulse Test
80
60
40
75°C
Tc = –25°C
20
25°C
2V
2
4
6
8
1
2
3
4
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
1.0
Pulse Test
0.8
ID = 50 A
0.6
0.4
20 A
0.2
0
0
0
10
10 A
4
8
12
16
20
Gate to Source Voltage VGS (V)
Rev.4.00 Sep 07, 2005 page 3 of 7
Static Drain to Source on State Resistance
RDS (on) (mΩ)
Drain to Source Saturation Voltage
VDS (on) (V)
0
5
100
Pulse Test
50
VGS = 4 V
20
10
10 V
5
2
1
1
2
5
10
20
50 100 200
Drain Current ID (A)
Forward Transfer Admittance
vs. Drain Current
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance yfs (S)
Static Drain to Source on State Resistance
RDS (on) (mΩ)
2SK3151
50
Pulse Test
40
10,20 A
ID = 50 A
30
50 A
4V
20
10, 20 A
10
VGS = 10 V
0
–50
0
50
100
150
200
VDS = 10 V
Pulse Test
100
50
Tc = –25°C
20
10
25°C
5
75°C
2
1
0.5
0.1
0.3
1
3
10
30
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance
vs. Drain to Source Voltage
100
30000
VGS = 0
f = 1 MHz
Capacitance C (pF)
500
200
100
50
20
200
160
120
0.3
1
3
10
30
1000
Coss
Crss
10
20
30
40
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
20
ID = 50 A
VGS
VDD = 100 V
50 V
25 V
16
12
VDS
80
8
40
4
0
Ciss
3000
100
0
100
VDD = 100 V
50 V
25 V
80
160
240
320
Gate Charge Qg (nc)
Rev.4.00 Sep 07, 2005 page 4 of 7
0
400
50
5000
Switching Time t (ns)
10
0.1
10000
300
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
Gate to Source Voltage VGS (V)
Reverse Recovery Time trr (ns)
200
Case Temperature TC (°C)
1000
Drain to Source Voltage VDS (V)
500
td(off)
1000
tf
500
200
tr
100
50
20
10
0.1 0.2
td(on)
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %
0.5 1
2
5 10 20
Drain Current ID (A)
50
2SK3151
40
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
(A)
50
Reverse Drain Current IDR
Reverse Drain Current vs.
Source to Drain Voltage
10 V
30
VGS = 0, –5 V
20
5V
10
Pulse Test
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
250
IAP = 50 A
VDD = 50 V
duty < 0.1 %
Rg > 50 Ω
200
150
100
50
0
25
VSDF (V)
50
75
100
125
150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 1.0°C/W, Tc = 25°C
0.1
0.05
PDM
0.02
1
lse
0.0 t pu
o
h
1s
0.03
0.01
10 µ
D=
PW
T
100 µ
1m
10 m
Pulse Width
100 m
1
10
PW (S)
Avalanche Test Circuit
VDS
Monitor
PW
T
Avalanche Waveform
L
EAR =
1
2
• L • IAP2 •
VDSS
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
D. U. T
VDS
VDD
ID
Vin
15 V
50 Ω
0
Rev.4.00 Sep 07, 2005 page 5 of 7
VDD
2SK3151
Switching Time Test Circuit
Switching Time Waveforms
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
10 V
50 Ω
VDD
= 30 V
Vout
10%
10%
10%
90%
td(on)
Rev.4.00 Sep 07, 2005 page 6 of 7
tr
90%
td(off)
tf
2SK3151
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
SC-65
PRSS0004ZE-A
TO-3P / TO-3PV
5.0g
4.8 ± 0.2
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
Unit: mm
5.0 ± 0.3
15.6 ± 0.3
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
5.45 ± 0.5
Ordering Information
Part Name
2SK3151-E
Quantity
30 pcs
Shipping Container
Plastic magazine
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.4.00 Sep 07, 2005 page 7 of 7
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Colophon .3.0