2SB1001 Silicon PNP Epitaxial REJ03G0659-0200 (Previous ADE-208-1034) Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SD1367 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 4 *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current IC Collector peak current iC(peak) *1 Collector power dissipation PC*2 Junction temperature Tj Storage temperature Tstg Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) Rev.2.00 Aug 10, 2005 page 1 of 5 Ratings –20 –16 –6 –2 –3 1 150 –55 to +150 Unit V V V A A W °C °C 2SB1001 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE Min –20 –16 –6 — — 160 Typ — — — — — — Max — — — –0.1 –0.1 320 Unit V V V µA µA Collector to emitter saturation voltage VCE(sat) — –0.15 –0.3 V IC = –1 A, IB = –0.1 A (Pulse test) Base to emitter saturation voltage VBE(sat) — –1.0 –1.2 V IC = –1 A, IB = –0.1 A (Pulse test) fT — 150 — MHz Cob — 50 — pF Gain bandwidth product Collector output capacitance Rev.2.00 Aug 10, 2005 page 2 of 5 Test conditions IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –16 V, IE = 0 VEB = –5 V, IC = 0 VCE = –2 V, IC = –0.1 A (Pulse test) VCE = –2 V, IC = –10 mA VCB = –10 V, IE = 0, f = 1 MHz 2SB1001 Main Characteristics Typical Output Characteristics (1) –100 1.2 Collector Current IC (mA) Collector Power Dissipation Pc (W) (on the alumina ceramic board) Maximum Collector Dissipation Curve 0.8 0.4 –0 –80 .3 –0 25 –0. –0.2 –60 –0.15 –40 –0.1 –0.05 mA –20 IB = 0 0 50 100 150 0 –2 –1 –1.6 –8 –10 –1,000 –20 5 Collector Current IC (mA) –25 –6 Typical Transfer Characteristics Typical Output Characteristics (2) –2.0 –4 Collector to Emitter Voltage VCE (V) Ambient Temperature Ta (°C) Collector Current IC (A) .35 –10 –1.2 –5 mA –0.8 –0.4 VCE = –2 V Pulse –300 –100 Ta = 75°C –30 25 –10 –25 –3 IB = 0 –1 0 –0.4 –0.8 –1.2 –1.6 –2.0 –0.2 –0.4 –0.6 –0.8 –1.0 Base to Emitter Voltage VBE (V) DC Current Transfer Ratio vs. Collector Current Saturation Voltage vs. Collector Current 3,000 1,000 VCE = –2 V Pulse 25 Ta = 75°C 300 100 –25 30 10 –1 –3 –10 –30 –100 –300 –1,000 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 5 Collector to Emitter Saturation Voltage VCE (sat) (V) Base to Emitter Saturation Voltage VBE (sat) (V) Collector to Emitter Voltage VCE (V) 10,000 DC Current Transfer Ratio hFE 0 –3.0 VBE (sat) –1.0 –0.3 –0.1 VCE (sat) –0.03 IC = 10 IB Pulse –0.01 –0.003 –3 –10 –30 –100 –300 –1,000–3,000 Collector Current IC (mA) 2SB1001 Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 1,000 f = 1 MHz IE = 0 300 100 30 10 –0.1 –0.3 –1.0 –3 –10 Collector to Base Voltage VCB (V) Rev.2.00 Aug 10, 2005 page 4 of 5 2SB1001 Package Dimensions RENESAS Code Package Name MASS[Typ.] PLZZ0004CA-A UPAK / UPAKV 0.050g 1.5 1.5 3.0 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max (1.5) 0.44 Max (0.2) 0.53 Max 0.48 Max 0.8 Min φ1 0.4 4.5 ± 0.1 1.8 Max Unit: mm (2.5) SC-62 (0.4) JEITA Package Code Ordering Information Part Name 2SB1001BJTR-E Quantity 1000 Shipping Container φ 178 mm Reel, 12 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145 Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 © 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0