DATA SHEET PHOTOCOUPLER PS2533-1,PS2533L-1 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES −NEPOC Series− DESCRIPTION The PS2533-1 and PS2533L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington connected phototransistor. The PS2533-1 is in a plastic DIP (Dual In-line Package) and the PS2533L-1 is lead bending type (Gull-wing) for surface mount. FEATURES • High collector to emitter voltage (VCEO = 350 V) PIN CONNECTION (Top View) • High Isolation voltage (BV = 5 000 Vr.m.s.) • High current transfer ratio (CTR = 4 000% TYP.) 4 3 • High-speed switching (tr, tf = 100 μs TYP.) <R> • Ordering number of tape product: PS2533L-1-F3: 2 000 pcs/reel <R> • Safety standards 1. Anode 2. Cathode 3. Emitter 4. Collector 1 • UL approved: No. E72422 2 • CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950) • BSI approved: No. 8221/8222 • SEMKO approved: No. 903238 • NEMKO approved: No. P09210868 • DEMKO approved: No. 314999 • FIMKO approved: No. FI 25119 • DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40008862 (Option) APPLICATIONS • Telephone, Exchange equipment • FAX/MODEM The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PN10233EJ03V0DS (3rd edition) Date Published November 2009 NS Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 1990, 2009 PS2533-1,PS2533L-1 <R> PACKAGE DIMENSIONS (Unit : mm) DIP Type PS2533-1 4.6±0.35 6.5±0.5 4 3 1 2 3.5±0.3 3.2±0.4 4.15±0.4 7.62 0 to 15° +0.1 0.25 –0.05 1.25±0.15 0.50±0.10 0.25 M 2.54 Lead Bending Type PS2533L-1 4.6±0.35 3 1 2 0.9±0.25 9.60±0.4 1.25±0.15 0.25 M 2.54 <R> 0.1 +0.1 –0.05 3.5±0.3 0.25 +0.1 –0.05 6.5±0.5 4 0.15 PHOTOCOUPLER CONSTRUCTION Parameter Unit (MIN.) Air Distance 7 mm Outer Creepage Distance 7 mm Inner Creepage Distance 4 mm Isolation Thickness 2 0.4 mm Data Sheet PN10233EJ03V0DS PS2533-1,PS2533L-1 <R> MARKING EXAMPLE No. 1 pin Mark 2533 NJ931 N J Assembly Lot 9 31 Week Assembled Year Assembled (Last 1 Digit) In-house Code CTR Rank Code Package New PKG Made in Japan J Data Sheet PN10233EJ03V0DS 3 PS2533-1,PS2533L-1 <R> ORDERING INFORMATION Part Number Order Number Solder Plating Packing Style Specification PS2533-1 PS2533-1-A PS2533L-1 PS2533L-1-A PS2533L-1-F3 PS2533L-1-F3-A Pb-Free Magazine case 100 pcs Safety Standard Application Part Approval Number Standard products (UL, CSA, BSI, Embossed Tape 2 000 pcs/reel SEMKO, NEMKO, DEMKO, FIMKO approved) PS2533-1-V PS2533-1-V-A PS2533L-1-V PS2533L-1-V-A PS2533L-1-V-F3 PS2533L-1-V-F3-A Magazine case 100 pcs DIN EN60747-5-2 (VDE0884 Part2) Embossed Tape 2 000 pcs/reel Approved (Option) *1 For the application of the Safety Standard, following part number should be used. 4 Data Sheet PN10233EJ03V0DS *1 PS2533-1 PS2533-1,PS2533L-1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) Parameter Symbol Ratings Unit Forward Current (DC) IF 80 mA Reverse Voltage VR 6 V ΔPD/°C 1.5 mW°C PD 150 mW IFP 1 A Collector to Emitter Voltage VCEO 350 V Emitter to Collector Voltage VECO 0.6 V IC 150 mA ΔPC/°C 3.0 mW/°C PC 300 mW BV 5 000 Vr.m.s. Operating Ambient Temperature TA −55 to +100 °C Storage Temperature Tstg −55 to +150 °C Diode Power Dissipation Derating Power Dissipation Peak Forward Current Transistor *1 Collector Current Power Dissipation Derating Power Dissipation Isolation Voltage *2 *1 PW = 100 μs, Duty Cycle = 1% *2 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output. Pins 1-2 shorted together, 3-4 shorted together. Data Sheet PN10233EJ03V0DS 5 PS2533-1,PS2533L-1 ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Diode Symbol Conditions Forward Voltage VF IF = 10 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1.0 MHz MIN. TYP. MAX. Unit 1.15 1.40 V 5 μA 30 pF Transistor Collector to Emitter Dark Current ICEO VCE = 350 V, IF = 0 mA Coupled Current Transfer Ratio (IC/IF) CTR IF = 1 mA, VCE = 2 V Collector Saturation Voltage VCE (sat) IF = 1 mA, IC = 2 mA Isolation Resistance RI-O VI-O = 1.0 kVDC Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.6 pF *1 tr VCC = 5 V, IC = 10 mA, RL = 100 Ω 100 μs Rise Time Fall Time *1 tf VCC (PW = 1 ms, Duty cycle = 1/10) IF 50 Ω 6 10 4 000 VOUT RL = 100 Ω Data Sheet PN10233EJ03V0DS nA 6 500 % 1.0 V Ω 11 100 *1 Test circuit for switching time Pulse input 1 500 400 PS2533-1,PS2533L-1 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 150 100 1.5 mW/°C 50 0 25 50 75 100 125 300 200 3.0 mW/°C 100 0 150 25 50 75 100 150 Ambient Temperature TA (°C) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 160 TA = +100°C +75°C +50°C Collector Current IC (mA) 10 140 +25°C 0°C –25°C –55°C 1 0.1 5.0 120 4.5 mA mA A m 4.0 mA 5 . 3 mA 3.0 mA 2.5 A 2.0 m 100 80 1.5 mA 60 1.0 mA 40 20 0.01 0.6 0.8 1.0 1.2 1.4 1.6 0 IF = 0.5 mA 1 2 3 4 5 6 7 8 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 10 μ 500 VCE = 350 V 1μ Collector Current IC (mA) Collector to Emitter Dark Current ICEO (A) 125 Ambient Temperature TA (°C) 100 Forward Current IF (mA) 400 100 n 10 n 1n 100 p –50 –25 0 25 50 75 100 mA IF = 5.0 A 2.0 m 1.0 mA 100 50 0.5 mA 10 5 1 0.5 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Collector Saturation Voltage VCE (sat) (V) Ambient Temperature TA (°C) Remark The graphs indicate nominal characteristics. Data Sheet PN10233EJ03V0DS 7 PS2533-1,PS2533L-1 5 000 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25°C, IF = 1 mA, VCE = 2 V 0.2 0.0 –50 –25 0 25 50 75 4 000 2 000 1 000 0 0.1 1 5 10 15 SWITCHING TIME vs. LOAD RESISTANCE FREQUENCY RESPONSE 5 tr 0 td 50 tf 10 5 50 100 200 500 2k –20 –30 0.01 1.0 IF = 1 mA, TA = 25°C IF = 1 mA, TA = 60°C 0.4 0.2 102 103 104 1 kΩ 1 μF Vin 47 Ω 0.1 RL Vout 1 Frequency f (kHz) LONG TERM CTR DEGRADATION 0.6 105 10 Ω VCE = 4 V, Vin = 0.1 Vp-p –15 1.2 0.8 100 Ω –10 –25 1k RL = 1 kΩ –5 Load Resistance RL (Ω) CTR (Relative Value) 0.5 Forward Current IF (mA) ts 106 Time (Hr) Remark The graphs indicate nominal characteristics. 8 Sample A B 3 000 100 100 0.0 10 VCE = 2 V Ambient Temperature TA (°C) VCC = 10 V, IC = 10 mA 1 20 Current Transfer Ratio CTR (%) 1.2 500 Switching Time t (μs) CURRENT TRANSFER RATIO vs. FORWARD CURRENT Normalized Gain Gv Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE Data Sheet PN10233EJ03V0DS 10 100 PS2533-1,PS2533L-1 TAPING SPECIFICATIONS (Unit : mm) 1.55±0.1 4.5 MAX. 10.3±0.1 1.5 +0.1 –0 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 7.5±0.1 4.0±0.1 5.3±0.1 8.0±0.1 0.4 Tape Direction PS2533L-1-F3 Outline and Dimensions (Reel) 2.0±0.5 R 1.0 φ 21.0±0.8 φ 100±1.0 2.0±0.5 φ 13.0±0.2 φ 330±2.0 <R> 17.5±1.0 21.5±1.0 Packing: 2 000 pcs/reel Data Sheet PN10233EJ03V0DS 15.9 to 19.4 Outer edge of flange 9 PS2533-1,PS2533L-1 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering • Peak reflow temperature 260°C or below (package surface temperature) • Time of peak reflow temperature 10 seconds or less • Time of temperature higher than 220°C 60 seconds or less • Time to preheat temperature from 120 to 180°C 120±30 s • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) Package Surface Temperature T (°C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 260°C MAX. 220°C to 60 s 180°C 120°C 120±30 s (preheating) Time (s) (2) Wave soldering • Temperature 260°C or below (molten solder temperature) • Time 10 seconds or less • Preheating conditions 120°C or below (package surface temperature) • Number of times One (Allowed to be dipped in solder including plastic mold portion.) • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Soldering by soldering iron • Peak temperature (lead part temperature) 350°C or below • Time (each pins) 3 seconds or less • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead. (b) Please be sure that the temperature of the package would not be heated over 100°C. 10 Data Sheet PN10233EJ03V0DS PS2533-1,PS2533L-1 (4) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. 3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler Check the setting values before use, since the forward current conditions at CTR measurement differ according to product. When using products other than at the specified forward current, the characteristics curves may differ from the standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the like into consideration before use. USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity. Data Sheet PN10233EJ03V0DS 11 PS2533-1,PS2533L-1 <R> SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884) Parameter Symbol Climatic test class (IEC 60068-1/DIN EN 60068-1) Speck Unit 55/100/21 Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) UIORM 890 Vpeak Upr 1 335 Vpeak Upr 1 669 Vpeak UTR 8 000 Vpeak Upr = 1.5 × UIORM, Pd < 5 pC Test voltage (partial discharge test, procedure b for all devices test) Upr = 1.875 × UIORM, Pd < 5 pC Highest permissible overvoltage Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) 2 CTI Material group (DIN EN 60664-1 VDE0110 Part 1) 175 III a Storage temperature range Tstg −55 to +150 °C Operating temperature range TA –55 to +100 °C VIO = 500 V dc at TA = 25°C Ris MIN. 10 12 Ω VIO = 500 V dc at TA MAX. at least 100°C Ris MIN. 10 11 Ω Package temperature Tsi 175 °C Current (input current IF, Psi = 0) Isi 400 mA Power (output or total power dissipation) Psi 700 mW Ris MIN. 10 Isolation resistance, minimum value Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Isolation resistance VIO = 500 V dc at TA = 175°C (Tsi) 12 Data Sheet PN10233EJ03V0DS 9 Ω PS2533-1,PS2533L-1 • The information in this document is current as of November, 2009. 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