2N7002K

MOSFET
SMD Type
N-Channel Enhancement MOSFET
2N7002K
SOT-23
Features
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
Low On-Resistance: RDS(ON)
1
D rain
Fast Switching Speed
2
+0.1
0.95 -0.1
1.9
● ESD Protected 2KV HBM
+0.05
0.1 -0.01
+0.1
-0.1
+0.1
0.97 -0.1
Low Input/Output Leakage
0.55
Low Input Capacitance
+0.1
1.3 -0.1
+0.1
2.4 -0.1
Low Gate Threshold Voltage
0.4
3
Source
1.Base
1 GATE
+0.1
-0.1
2.Emitter
2 SOURCE
3 DRAIN
0.38
Gate
Protection
Diode
0-0.1
Gate
Absolute Maximum Ratings Ta=25
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
60
Gate-Source Voltage -Continuous
VGS
±20
Drain Current
-Continuous ( Note:1)
300
ID
-Pulsed
800
Unit
V
mA
PD
350
mW
RthJA
357
℃/W
Junction Temperature
TJ
150
Junction and Storage Temperature Range
Tstg
-55 to 150
Power Dissipation
(Note 1)
Thermal Resistance.Junction- to-Ambient
℃
Notes: 1. Device mounted on FR-4 PCB.
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
60
V
Drain-Source Breakdown Voltage (Note.2)
VDSS
ID=100μA, VGS=0V
Zero Gate Voltage Drain Current
(Note.2)
IDSS
VDS=60V, VGS=0V
1
μA
Gate-Body Leakage Current
(Note.2)
IGSS
VDS=0V, VGS=±20V
±10
uA
Gate Threshold Voltage
(Note.2)
VGS(th)
2.5
V
Static Drain-Source On-Resistance
Forward Transfer Admittance
Input Capacitance
(Note.2)
(Note.2)
RDS(On)
| Yfs |
VDS=VGS , ID=250μA
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Turn-On DelayTime
td(on)
Turn-Off DelayTime
td(off)
1.6
2
VGS=10V, ID=50mA
3
VGS=10V, ID=200mA
80
Ω
ms
50
Ciss
Output Capacitance
1
VGS=10V, ID=500mA
VGS=0V, VDS=25V, f=1MHz
25
pF
5
VGS=4.5V, VDS=15V, ID=200mA
0.8
ID=200mA, VDS=30V,
RG=10Ω,VGEN=10V,RL=150Ω
20
nC
40
ns
Note: 2. Short duration test pulse used to minimize self-heating effect.
Marking
Marking
702.
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MOSFET
SMD Type
2N7002K
Typical Characteristics
1.00
1.4
V GS = 10V
8V
6V
5V
4V
3V
10V
V DS = 10V
Pulsed
8V
6V
1.0
ID , DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
1.2
5V
0.8
4V
0.6
0.4
0.2
T A = 125°
C
0.10
T A = 75°
C
T A = 25°
C
T A = -25°
C
3V
0.01
0
0
1
2
1.5
1
5
4
3
V DS ,DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
2.5
3
3.5
4.5
4
5
10
2
VGS(th), GATE THRESHOLD VOLTAGE (V)
2
V GS , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
V GS = 10V
Pulsed
V DS = 10V
ID = 1mA
Pulsed
T A = 125°
C
1.5
T A = 85°
C
T A = 150°
C
1
1
T A = -55°
C
0
-50
T A = 0°
C
T A = 25°
C
0.5
-25
25
0
50
75
100
125
150
T ch, CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage
vs. Channel Tem perature
10
0.1
0.001
T A = -25°
C
0.1
0.01
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
Vs. Drain Current
1
7
V GS = 5V
Pulsed
T A = 125°
C
T A = 25°
C
Pulsed
6
T A = 85°
C
ID = 300mA
T A = 150°
C
5
4
1
T A = -55 °
C
T A = 25°
C
T A = 0°
C
3
T A = -25°
C
2
ID = 150mA
1
0.1
0
0.01
0.001
0.1
ID , DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
2
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1
0
2
4
6
8
10
12
14
16
18
V GS, GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
20
MOSFET
SMD Type
2N7002K
2.5
1
V GS = 10V
Pulsed
V GS = 0V
Pulsed
2
I D = 150mA
1.5
1
0.5
ID R , R E V E R S E D R A IN C U R R E N T (A)
ID = 300mA
T A = 125°
C
T A = 150 °
C
0.1
T A = 85 °
C
T A = 25 °
C
T A = 0°
C
0.01
T A = -25°
C
T A = -55°
C
0
0.001
-75 -50
-25
0
25
50
75
100 125
150
0.5
0
Tch, CHANNEL TEMPERATURE ( C)
°
Fig. 7 Static Drain-Source On-State Resistance
vs. Channel Tem perature
V GS = 10V
T A= 25°C
Pulsed
0.1
0.01
V GS = 0V
0.001
0
0.5
V SD , SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Reverse Drain Current
vs. Source-Drain Voltage
1
1.5
V SD , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Reverse Drain Current
vs. Source-Drain Voltage
|Yfs|, F O R W A R D T R A N S F E R A D M IT T A N C E (S)
ID R , R E V E R S E D R A IN C U R R E N T (A)
1
1
1
V GS = 10V
Pulsed
T A = 25°
C
T A = 150°
C
0.1
T A = -55°
C
C
T A = 85 °
0.01
0.001
0.001
0.01
0.1
1
ID , DRAIN CURRENT (A)
Fig.10 Forward Transfer Admittance
vs. Drain Current
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