SMD Type MOSFET

MOSFET
SMD Type
N-Channel MOSFET
AO4498E (KO4498E)
SOP-8
Unit:mm
■ Features
● VDS (V) = 30V
● ID = 18 A (VGS = 10V)
● RDS(ON) < 5.8mΩ (VGS = 10V)
1.50 0.15
0.21 -0.02
+0.04
● RDS(ON) < 8.5mΩ (VGS = 4.5V)
● ESD Rating: 2KV HBM
1
2
3
4
Source
Source
Source
Gate
5
6
7
8
Drain
Drain
Drain
Drain
D
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±20
Continuous Drain Current
TA=25℃
TA=70℃
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Lead
Junction Temperature
Storage Temperature Range
ID
IDM
TA=25℃
TA=70℃
t ≤ 10s
Steady-State
PD
RthJA
Unit
V
18
14
A
120
3.1
2
W
40
75
RthJL
24
TJ
150
Tstg
-55 to 150
℃/W
℃
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1
MOSFET
SMD Type
N-Channel MOSFET
AO4498E (KO4498E)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
30
Drain-Source Breakdown Voltage
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±20V
Gate Threshold Voltage
VGS(th)
VDS=VGS , ID=250uA
Static Drain-Source On-Resistance
RDS(On)
ID=250μA, VGS=0V
VDS=30V, VGS=0V
1
VDS=30V, VGS=0V, TJ=55℃
5
VGS=10V, ID=18A
1.3
ID(ON)
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Qgd
Turn-On DelayTime
td(on)
Turn-On Rise Time
tr
Turn-Off DelayTime
td(off)
Turn-Off Fall Time
tf
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Maximum Body-Diode Continuous Current
IS
Diode Forward Voltage
VSD
Marking
2
4498E
KC****
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2.3
V
VGS=10V, VDS=5V
120
VDS=5V, ID=18A
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=18A
mΩ
8.5
A
50
S
1840
2760
230
430
145
340
0.6
1.9
34
50
16
24
5.6
8.4
6
pF
Ω
nC
14
8
10
VGS=10V, VDS=15V, RL=0.83Ω,
RGEN=3Ω
ns
33
8
IF= 18A, dI/dt= 500A/us
10
15
22
32
nC
4
A
1
V
IS=1A,VGS=0V
Note : The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
■ Marking
uA
5.8
Qg
Qgs
uA
±10
8.9
TJ=125℃
VGS=5V, ID=16A
Forward Transconductance
Unit
V
VGS=10V, ID=18A
On State Drain Current
Max
MOSFET
SMD Type
N-Channel MOSFET
AO4498E (KO4498E)
■ Typical Characterisitics
100
120
6V
10V
100
VDS=5V
4.5V
80
4V
60
ID(A)
ID (A)
80
60
40
3.5V
40
20
20
VGS=3V
0
0
0
1
2
3
4
5
0
1
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
3
4
5
6
1.8
Normalized On-Resistance
10
RDS(ON) (mΩ )
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
12
VGS=4.5V
8
6
4
VGS=10V
2
0
0
5
VGS=10V
ID=18A
1.6
1.4
VGS=4.5V
ID=16A 2
1.2
1
0.8
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
10
0
20
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+02
ID=18A
1.0E+01
15
1.0E+00
10
IS (A)
RDS(ON) (mΩ )
25°C
125°C
125°C
5
1.0E-01
1.0E-02
125°C
25°C
1.0E-03
25°C
1.0E-04
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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MOSFET
SMD Type
N-Channel MOSFET
AO4498E (KO4498E)
■ Typical Characterisitics
3500
10
VDS=15V
ID=18A
3000
Capacitance (pF)
8
VGS (Volts)
6
4
2
Ciss
2500
2000
1500
1000
Coss
500
Crss
0
0
0
5
10
15
20
25
30
35
40
0
45
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
10000
TA=25°C
10µs
RDS(ON)
limited
1000
100µs
1.0
1ms
0.1
10s
Power (W)
ID (Amps)
10.0
15
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
100.0
10
10ms
TJ(Max)=150°C
TA=25°C
100
10
DC
0.0
0.01
0.1
1
10.
1
100
0.00001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PD
Single Pulse
0.01
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4
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100
1000
30