MOSFET SMD Type Complementary Enhancement MOSFET SI5513CD (KI5513CD) ■ Features ● N-Channel：VDS=20V ID=4A(VGS=4.5V) RDS(ON) ＜ 35mΩ (VGS = 4.5V) RDS(ON) ＜ 50mΩ (VGS = 2.5V) RDS(ON) ＜ 90mΩ (VGS = 1.8V) ● P-Channel：VDS=-20V ID=-2.5A(VGS=-4.5V) RDS(ON) ＜ 85mΩ (VGS =-4.5V) RDS(ON) ＜ 115mΩ (VGS =-2.5V) RDS(ON) ＜ 150mΩ (VGS =-1.8V) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 20 -20 Gate-Source Voltage VGS ±12 ±12 4 -2.5 3.2 -2 20 -20 Continuous Drain Current Ta=25℃ ID Ta=70℃ Pulsed Drain Current IDM Power Dissipation for Dual Operation Power Dissipation for single Operation Junction Temperature Storage Temperature Range Ta=70℃ PD 1.5 1.5 0.95 0.95 TJ 150 Tstg -55 to 150 Unit V A W ℃ www.kexin.com.cn 1 MOSFET SMD Type Complementary Enhancement MOSFET SI5513CD (KI5513CD) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS Gate Threshold Voltage VGS(th) Test Conditions Type Min ID=250μA, VGS=0V N-CH 20 ID=-250μA, VGS=0V P-CH -20 VDS=20V, VGS=0V N-CH 300 VDS=-20V, VGS=0V P-CH -300 N-CH ±100 P-CH ±100 VDS=VGS , ID=250μA N-CH 0.62 VDS=VGS, ID=-250μA P-CH -0.5 0.75 1.0 25 35 34 50 VGS=1.8V, ID=2A 64 90 VGS=-4.5V, ID=-2.8A 80 85 95 115 117 150 VGS=-2.5V, ID=-2A N-CH P-CH VGS=-1.8V, ID=-2A Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Turn-On DelayTime td(on) Turn-On Rise Time tr Turn-Off DelayTime td(off) Turn-Off Fall Time Maximum Body-Diode Continuous Current Diode Forward Voltage 2 www.kexin.com.cn VDS=5V, ID=3A N-CH 16 VDS=-5V, ID=-2.5A P-CH 13 N-CH 522.3 P-CH 589 N-Channel: N-CH 98.48 P-Channel: P-CH 91.18 VGS=0V, VDS=-10V, f=1MHz N-CH 74.69 P-CH 67.18 N-CH 6.24 8.11 N-Channel: P-CH 6.55 8.52 VGS=4.5V, VDS=10V, ID=4A N-CH 1.64 2.13 P-Channel: P-CH 0.31 0.4 VGS=-4.5V, VDS=-6V, ID=-2.5A N-CH 1.34 1.74 P-CH 1.3 1.69 N-CH 10.4 20.8 N-Channel: P-CH 9.72 19.44 VGS=4.5V, VDS=10V, ID=1A, RGEN=6Ω N-CH 4.4 8.8 P-CH 3.56 7.12 N-CH 27.38 54.72 VGS=-4.5V, VDS=-6V, ID=-1A, RGEN=6Ω P-CH 33.32 66.64 tf IS VSD 4.16 8.32 P-CH 4.52 9.04 N-CH 1.7 P-CH -1.6 N-CH IS=-1.6A,VGS=0V P-CH 0.6 nA V mΩ pF N-CH IS=1.7A,VGS=0V nA S VGS=8V, VDS=0V, f=1MHz P-Channel: Unit V VDS=0V, VGS=±12V VGS=2.5V, ID=2.5A RDS(On) Max VDS=0V, VGS=±12V VGS=4.5V, ID=3.5A Static Drain-Source On-Resistance Typ 0.74 1.0 -0.8 -1.2 nC ns A V MOSFET SMD Type SI5513CD (KI5513CD) ■ N-channel Typical Characterisitics www.kexin.com.cn 3 MOSFET SMD Type SI5513CD (KI5513CD) ■ N-channel Typical Characterisitics . 4 www.kexin.com.cn MOSFET SMD Type SI5513CD (KI5513CD) ■ P-Channel Typical Characterisitics www.kexin.com.cn 5 MOSFET SMD Type SI5513CD (KI5513CD) ■ P-Channel Typical Characterisitics 6 www.kexin.com.cn