MOSFET SMD Type N-Channel MOSFET AO4486 (KO4486) SOP-8 Unit:mm ■ Features ● VDS (V) = 100V ● ID = 4.2 A (VGS = 10V) 1.50 0.15 0.21 -0.02 +0.04 ● RDS(ON) ＜ 79mΩ (VGS = 10V) ● RDS(ON) ＜ 90mΩ (VGS = 4.5V) 1 2 3 4 Source Source Source Gate 5 6 7 8 Drain Drain Drain Drain D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range L=0.1mH TA=25℃ TA=70℃ t ≤ 10s Steady-State ID 3.4 31 IAS,IAR 14 EAS,EAR 10 RthJA V 4.2 IDM PD Unit 3.1 2 A mJ W 40 75 RthJL 24 TJ 150 Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO4486 (KO4486) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V Gate Threshold Voltage VGS(th) VDS=VGS , ID=250uA Static Drain-Source On-Resistance RDS(On) ID=250μA, VGS=0V Min Typ 100 VDS=100V, VGS=0V 1 VDS=100V, VGS=0V, TJ=55℃ 5 VGS=10V, ID=3A 1.6 ID(ON) gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) Gate Source Charge Gate Drain Charge Qgd Turn-On DelayTime td(on) Turn-On Rise Time tr Turn-Off DelayTime td(off) Turn-Off Fall Time tf Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD Marking 2 4486 KC**** www.kexin.com.cn 2.7 V VGS=10V, VDS=5V 31 VDS=5V, ID=3A VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=50V, ID=3A mΩ 90 A 20 S 620 942 38 81 13 35 0.7 2.2 13 20 6.4 10 2.2 3.4 2.4 pF Ω nC 5.8 6 2.5 VGS=10V, VDS=50V, RL=16.7Ω, RGEN=3Ω ns 21 2.4 IF= 3A, dI/dt= 500A/us 14 28 65 123 nC 3.5 A 1 V IS=1A,VGS=0V Note : The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. ■ Marking nA 79 Qg Qgs uA ±100 151 TJ=125℃ VGS=4.5V, ID=3A On State Drain Current Unit V VGS=10V, ID=3A Forward Transconductance Max MOSFET SMD Type N-Channel MOSFET AO4486 (KO4486) ■ Typical Characterisitics www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO4486 (KO4486) ■ Typical Characterisitics . 4 www.kexin.com.cn MOSFET SMD Type N-Channel MOSFET AO4486 (KO4486) ■ Typical Characterisitics www.kexin.com.cn 5