Transistors IC SMD Type NPN Transistors 2SC2412 (2SC2412K) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 1 0.55 Low Cob.Cob=2.0pF (Typ.) +0.1 1.3 -0.1 +0.1 2.4 -0.1 0.4 3 Features 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.1 0.97 -0.1 +0.05 0.1 -0.01 1.Base 0-0.1 +0.1 0.38 -0.1 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base v oltage Parameter VCBO 60 V Collector-emitter v oltage VCEO 50 V Emitter-base v oltage VEBO 7 V Collector current IC 0.15 A Collector power dissipation PC 0.2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 50 μA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 50 Emitter - base breakdown voltage VEBO IE= 50μA， IC= 0 7 Collector-base cut-off current ICBO VCB= 60 V , IE= 0 100 Emitter cut-off current IEBO VEB= 7V , IC=0 100 V Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB=5mA 0.4 Base - emitter saturation voltage VBE(sat) IC=50 mA, IB=5mA 1.2 DC current gain hFE VCE= 6V, IC= 1mA Collector output capacitance Cob VCB= 12V, IE= 0,f=1MHz Transition frequency fT VCE= 12V, I E = -2mA,f=100MHz 120 nA V 560 2 80 Unit 3.5 pF MHz ■ hFE Classification Type 2SC2412/K-Q 2SC2412/K-R 2SC2412/K-S Range 120-270 180-390 270-560 Marking BQ BR BS www.kexin.com.cn 1 Transistors SMD Type 2SC2412 (2SC2412K) ■ Typical Characterisitics VCE 5 —— IC 20uA 16uA DC CURRENT GAIN IC COLLECTOR CURRENT IC Ta=25℃ 14uA 12uA 3 —— Ta=100℃ hFE (mA) 18uA 4 hFE 500 COMMON EMITTER Ta=25℃ 10uA 8uA 2 6uA 100 4uA 1 COMMON EMITTER VCE= 6V IB=2uA 0 4 8 VCEsat 300 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 12 16 COLLECTOR-EMITTER VOLTAGE —— 10 0.1 20 VCE (V) IC 100 Ta=100 ℃ Ta=25℃ β=10 10 0.1 1 IC 150 —— IC 10 VBEsat —— IC 100 150 (mA) IC 800 Ta=25℃ 600 Ta=100 ℃ β=10 400 0.1 100 150 10 COLLECTOR CURREMT 1 COLLECTOR CURRENT 1000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 0 1 10 COLLECTOR CURREMT (mA) VBE fT 300 —— 100 150 IC (mA) IC (MHz) fT COMMON EMITTER VCE=6V 1 0 300 600 900 COLLECTOR CURRENT 50 Cob/Cib —— IC 100 TRANSITION FREQUENCY 10 T =2 5℃ a T =1 00℃ a BASE-EMMITER VOLTAGE VBE (mV) 100 COMMON EMITTER VCE=12V 10 0.5 1200 (mA) VCB/VEB Ta=25℃ 1 10 COLLECTOR CURRENT PC 250 —— IC 100 (mA) Ta f=1MHz IE=0/IC=0 Cib Cob 1 0.1 1 REVERSE VOLTAGE 2 COLLECTOR POWER DISSIPATION PC (mW) 10 CAPACITANCE C (pF) Ta=25 ℃ www.kexin.com.cn 10 V (V) 20 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) 150