Transistors SMD Type NPN Transistors 2SD2210 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=0.5A ● Collector Emitter Voltage VCEO=20V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 Emitter - Base Voltage VEBO 12 Collector Current - Continuous IC 0.5 Collector Current - Pulse ICP 1 Collector Power Dissipation PC 1 Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature Range Unit V A W ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 25 Collector- emitter breakdown voltage VCEO Ic= 1 mA，IB= 0 20 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 12 Collector-base cut-off current ICBO VCB= 25 V , IE= 0 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 V 1 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=20mA 0.4 Base - emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 1.2 DC current gain hFE ON resistanse Ron Collector output capacitance Cob Transition frequency fT VCE= 2V, IC=500mA 200 VCE= 2V, IC=1 A 60 Unit uA V 800 1 Ω VCB= 10V,IE=0, f=1MHz 10 pF VCB= 10V, IE=-50mA ,f=200MHz 200 MHz ■ Classification of hfe(1) Type 2SD2210-R 2SD2210-S 2SD2210-T Range 200-350 300-500 400-800 Marking 1KR 1KS 1KT www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SD2210 ■ Typical Characterisitics Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.2 1.0 0.8 0.6 0.4 3.0mA 0.8 2.5mA 2.0mA 0.6 1.5mA 0.4 1.0mA 0.5mA 0.2 0 20 40 60 0 80 100 120 140 160 0 1 2 100 IC/IB=10 5 6 30 Ta=–25˚C 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 800 Ta=75˚C 600 400 25˚C –25˚C 200 0 0.01 0.03 10 1000 300 ON resistance Ron (Ω) 16 12 8 4 0.3 1 3 10 3 10 30 100 Collector to base voltage VCB (V) www.kexin.com.cn Ta=75˚C 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.01 0.03 0.1 0.3 1 3 10 VCB=10V Ta=25˚C 350 300 250 200 150 100 50 0 –1 –3 –10 –30 –100 Emitter current IE (mA) Ron measuring circuit IB=1mA VB 100 V 30 Ron Measurement circuit 1kΩ IB=1mA VA f=1kHz V=0.3V 10 VB 3 Ron= 1 0.3 1 1 Ron — IB IE=0 Ta=25˚C f=1MHz 20 0.1 Collector current IC (A) Cob — VCB 24 3 400 Transition frequency fT (MHz) 25˚C 1 10 Collector current IC (A) VCE=2V 1000 10 3 30 fT — I E 1200 Collector current IC (A) Collector output capacitance Cob (pF) 4 IC/IB=25 hFE — IC Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) VBE(sat) — IC 2 3 100 Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C) 0 Ta=25˚C 3.5mA 1.0 0.2 0 VCE(sat) — IC IB=4.0mA Collector current IC (A) Collector power dissipation PC (W) IC — VCE 1.2 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.4 0.1 0.01 0.03 0.1 0.3 1 3 Base current IB (mA) 10 VV VB • 1000(Ω) VA–VB VA f=1kHz V=0.3V