Transistors Transistors SMD Type PNP Transistors 2SA733 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 1 0.55 +0.1 1.3 -0.1 +0.1 2.4 -0.1 Collector-Base Voltage: VCBO=-60V 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.1 0.97 -0.1 +0.05 0.1 -0.01 1.Base 0-0.1 +0.1 0.38 -0.1 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -60 V Collector to emitter voltage VCEO -50 V Emitter to base voltage VEBO -5.0 V Collector Current (DC) IC -150 mA mW Power dissipation PC 200 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditi ons Min Typ Max Unit Collector-base breakdown voltage VCBO IC= -50uA,IE=0 -60 V Collector-emitter breakdown voltage VCEO IC= -1mA , IB=0 -50 V -5 Emitter-base breakdown voltage VEBO IE= -50uA, IC=0 Collector cut-off current ICBO VCB= -60 V , IE=0 Emitter cut-off current IEBO VEB= -5 V , IC=0 DC current gain hFE VCE= -6 V, IC=-1mA Collector-emitter saturation voltage VCE(sat) IC= -100mA, IB=- 10mA Base-emitter voltage VBE(on) VCE=-6V,IC=-1.0mA Collector output capacitance Cob VCB=-10V,IE=0,f=1MHZ Noise figure NF VCE=-6V,IC=-0.3mA,Rg=10kΩ,f=100HZ Transition frequency fT VCE=-6V,IC=-10mA V 120 -0.1 uA -0.1 uA 475 -0.18 -0.3 V -0.58 -0.62 -0.68 V 4.5 7 pF 6 20 dB 50 MHz ■ Classification of hfe Type 2SA733-M6 2SA733-L 2SA733-H Range 200-400 120-220 220-475 Marking M6 CSL CS www.kexin.com.cn 1 Transistors Transistors SMD Type 2SA733 Typical Characteristics Static Characteristic -10uA -8uA -6uA -1 -0 -2 -4 VCEsat -6 -8 Ta=100℃ 200 Ta=25℃ 100 —— VCE 0 -0.1 -10 -10 COLLECTOR CURRENT IC VBEsat -1.2 -100 -150 -30 IC (mA) IC —— -300 -100 Ta=100℃ Ta=25℃ -30 -10 -0.3 -30 -10 IC -150 IC Ta=25℃ Ta=100℃ -0.4 -0.0 -0.2 -100 -150 -3 -1 -0.5 (mA) -10 —— VBE Cob/ Cib 20 —— (mA) VCB/ VEB (pF) Ta=100℃ Ta=25℃ Cib 10 IC IC f=1MHz IE=0/IC=0 -30 Cob C -10 -100 -150 -30 COLLECTOR CURRENT COMMON EMITTER VCE=-6V -100 -0.8 β=10 β=10 -3 -1 COLLECTOR CURRENT -3 Ta=25℃ -1 3 -0.3 -0.1 -0.2 -0.4 -0.6 -0.8 1 -0.1 -1.0 fT 300 —— IC -1 -3 REVERSE VOLTAGE V -0.3 BASE-EMMITER VOLTAGE VBE (V) PC 250 VCE=-6V -10 -20 (V) —— Ta COLLECTOR POWER DISSIPATION PC (mW) (MHz) Ta=25℃ fT TRANSITION FREQUENCY -3 -1 -0.3 (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -500 200 100 -1 -3 ww ww.kexin.com.cn -30 -10 COLLECTOR CURRENT 2 IC -4uA IB=-2uA COLLECTOR-EMITTER VOLTAGE (mA) DC CURRENT GAIN -12uA CAPACITANCE COLLECTOR CURRENT -14uA -2 —— COMMON EMITTER VCE=-6V hFE -18uA -16uA -0 COLLECTOR CURRENT hFE 300 COMMON EMITTER Ta=25℃ -20uA -3 IC (mA) -4 IC (mA) -100 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) 150