Transistors SMD Type PNP Transistors 2SB798 1.70 ■ Features 0.1 ● Low Collector Saturation Voltage: VCE(sat)< -0.4V (Ic = -1.0A, IB = -100mA ) ● Excellent DC Current Gain Linearity : 0.42 0.1 hFE = 100 Typ. (VCE = -1.0V, IC = -1.0A) 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -25 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -1 Collector Current - Pulse (Note.1) ICP -1.5 Collector Power Dissipation PC 2 Junction Temperature Storage Temperature range TJ 150 Tstg -55 to 150 Unit V A W ℃ Note.1: PW≦10ms,Duty Cycle≦50% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -30 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -25 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -30 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 V Collector-emitter saturation voltage VCE(sat) IC=-1 A, IB=-100mA -0.25 -0.4 Base - emitter saturation voltage VBE(sat) IC=-1 A, IB=-100mA -1 -1.2 Base - emitter voltage VBE DC current gain hFE Collector output capacitance Cob Transition frequency fT Unit VCE= -6V, IC= -10mA -600 -640 -700 VCE= -1V, IC= -100mA 90 200 400 VCE= -1V, IC= -1A 50 100 uA V mV VCB= -6V, IE= 10mA,f=1MHz 36 pF VCE= -6V, IC= -10mA 110 MHz Note.1:Pulse test : Pulse width ≤350μs,Duty Cycle≤2%. ■ Classification of hfe(1) Type 2SB798-M 2SB798-L 2SB798-K Range 90-180 135-270 200-400 Marking DM DL DK www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SB798 ■ Typical Characterisitics -1000 -500 1.0 -20 -10 0.5 -5 100 150 200 250 Collector Current, IC (mA) VCE=1.0V PULSED 1000 500 ℃ ℃℃ 200 100 ℃ 50 20 10 Collector Current, IC (A) www.kexin.com.cn Base Saturation Voltage, VBE(sat) (V) Collector Saturation Voltage, VCE(sat) (V) Collector Current, IC (mA) DC Current Gain vs.Collector Current DC Current Gain, hFE ℃ -2 -1 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 Base to Emitter Voltage, VBE (V) ℃ 2 ℃ -50 50 VCE=-0.6V PULSDE -200 -100 1.5 0 0 Collector Current vs. Base to Emitter Voltage ℃ Collector Dissipation vs. Ambient Temperature 2.5 When mounted on a ceramic substrate of 16cm2 *0.7mm 2.0 Collector and Base Saturation Voltage vs. Collector Current -10 IC=10*IB -5 -2 -1 VBE(sat) -0.5 -0.2 -0.1 -0.05 VCE(sat) -0.02 -0.01 -1 -2 -5 -10 -20-50-100-200-500-1-2 -5 Collector Current, IC (A) Transistors SMD Type PNP Transistors 2SB798 ■ Typical Characterisitics Gain Bandwidth Product, fT (MHz) 1000 500 VCE=-6.0V 200 100 VCE=-1.0V 50 20 10 1 2 5 10 20 50100 2005001000 Emitter Current, IE (mA) 100 Output Capacitance, Cob (pF) Gain Bandwidth Product vs. Emitter Current 50 Output Capacitance vs. Collector to Base Voltage IE=0 f=1.0MHz 20 10 5 2 1 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50-100 Collector to Base Voltage, VCB (V) www.kexin.com.cn 3