MOSFET SMD Type Complementary Trench MOSFET AO4622 (KO4622) SOP-8 Unit:mm ■ Features ● N-Channel : VDS (V) = 20V ID = 7.3 A (VGS = 4.5V) 1.50 0.15 0.21 -0.02 +0.04 RDS(ON) ＜ 23mΩ (VGS = 10V) RDS(ON) ＜ 30mΩ (VGS = 4.5V) 1 S1 2 G1 3 S2 4 G2 RDS(ON) ＜ 84mΩ (VGS = 2.5V) ● P-Channel : 5 D2 6 D2 7 D1 8 D1 VDS (V) = -20V ID = -5 A (VGS = -4.5V) RDS(ON) ＜ 53mΩ (VGS = -10V) RDS(ON) ＜ 87mΩ (VGS = -4.5V) D1 G1 D2 G2 S1 S2 N-channel P-channel ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 20 -20 Gate-Source Voltage VGS ±16 ±12 7.3 -5 6.2 -4.2 IDM 35 -25 IAR 13 -13 EAR 25 25 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range L=0.1mH TA=25℃ TA=70℃ t ≤ 10s Steady-State ID PD RthJA 2 1.44 Unit V A mJ W 62.5 100 RthJL 40 TJ 150 Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type Complementary Trench MOSFET AO4622 (KO4622) ■ N-Channel Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current Gate Threshold Voltage Test Conditions Min Typ ID=250μA, VGS=0V VDS=16V, VGS=0V 1 VDS=16V, VGS=0V, TJ=55℃ 5 IGSS VDS=0V, VGS=±16V VGS(th) VDS=VGS , ID=250uA On State Drain Current RDS(On) ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) Gate Source Charge VGS=10V, ID=7.3A 0.6 VGS=2.5V, ID=2A 84 VGS=4.5V, VDS=5V VDS=5V, ID=7.3A 35 900 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=10V, ID=6.5A 1.35 15 18 7.9 9 1.8 tr Turn-Off DelayTime td(off) IS Diode Forward Voltage VSD VGS=10V, VDS=10V, RL=1.4Ω, RGEN=3Ω Marking 2 4622 KA**** www.kexin.com.cn Ω nC 9.2 ns 18.7 3.3 IF= 7.3A, dI/dt= 100A/us 18 9.5 IS=1A,VGS=0V Note : The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. ■ Marking pF 0.9 Turn-On Rise Time Qrr 1100 105 4.5 Maximum Body-Diode Continuous Current S 162 2.8 Body Diode Reverse Recovery Charge mΩ A 17 Qgd trr V 30 td(on) Body Diode Reverse Recovery Time nA 2 VGS=4.5V, ID=6.4A Turn-On DelayTime tf ±100 33.6 TJ=125℃ Gate Drain Charge Turn-Off Fall Time uA 23 Qg Qgs Unit V VGS=10V, ID=7.3A Static Drain-Source On-Resistance Max 20 nC 3 A 1 V MOSFET SMD Type Complementary Trench MOSFET AO4622 (KO4622) ■ P-Channel Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Gate Threshold Voltage VGS(th) Test Conditions ID=-250uA, VGS=0V Min Typ -20 VDS=-16V, VGS=0V -1 VDS=-16V, VGS=0V, TJ=55℃ -5 VDS=0V, VGS=±12V VDS=VGS , ID=-250μA RDS(On) VGS=-4.5V, ID=-5A -0.5 ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Total Gate Charge (10V) Total Gate Charge (4.5V) Rg VGS=-4.5V, VDS=-5V VDS=-5V, ID=-5A 13 800 VGS=0V, VDS=-10V, f=1MHz 6.7 VGS=-4.5V, VDS=-10V, ID=-4.5A Ω 4.4 tr Turn-Off DelayTime td(off) VGS=-4.5V, VDS=-10V, RL=2Ω, RGEN=3Ω nC 1.3 td(on) 7.6 ns 44 13.5 IF=-5A, dI/dt=100A/us 20 9 IS VSD 10 7.4 Turn-On Rise Time Diode Forward Voltage pF 15.5 Turn-On DelayTime Maximum Body-Diode Continuous Current S 103 VGS=0V, VDS=0V, f=1MHz 2.9 Qrr mΩ 960 131 Qgd Body Diode Reverse Recovery Charge V A Gate Drain Charge tf -1.3 -25 Qgs trr nA 87 Gate Source Charge Turn-Off Fall Time ±100 71 TJ=125℃ Qg Body Diode Reverse Recovery Time uA 53 VGS=-2.5V, ID=-4.2A On state drain current Unit V VGS=-4.5V, ID=-5A Static Drain-Source On-Resistance Max IS=-1A,VGS=0V nC -2.5 A -1 V Note : The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. www.kexin.com.cn 3 MOSFET SMD Type Complementary Trench MOSFET AO4622 (KO4622) ■ N-Channel Typical Characterisitics 60 6V 10V 50 30 4.5V 20 3.5V 30 15 20 10 VGS=3V 10 5 0 0 1 2 3 4 0 5 1 VDS (Volts) Figure 1: On-Region Characteristics 5 VGS=10V, 7.3A 1.40 80 RDS(ON) (mΩ ) 3 4 VGS(Volts) Figure 2: Transfer Characteristics Normalized On-Resistance 90 70 VGS=2.5V 60 VGS=4.5V, 6.4A 1.20 50 40 1.00 VGS=4.5V 30 20 VGS=2.5V, 5.5A 0.80 10 VGS=10V 0 0 5 10 15 20 25 0.60 30 -50 ID (A) . Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.E+02 40 1.E+01 ID=7.3A 35 1.E+00 1.E-01 125°C 25 125°C IS (A) 30 RDS(ON) (mΩ ) 2 1.60 100 -40°C 1.E-02 20 25°C 1.E-03 25°C 15 1.E-04 10 3 4 5 6 7 8 9 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4 125°C -40°C ID(A) ID (A) 40 25°C VDS=5V 25 www.kexin.com.cn 10 1.E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 MOSFET SMD Type Complementary Trench MOSFET AO4622 (KO4622) ■ N-Channel Typical Characterisitics 10 1400 1200 VDS=10V ID=7.3A 6 4 2 800 600 Coss 400 200 0 0 0 3 6 Qg (nC) 9 12 Figure 7: Gate-Charge Characteristics 15 100.0 1ms 100µ 0 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 20 10µs 40 RDS(ON) limited 1.0 1 0.1s 10s 0.1 Power (W) 10ms DC TJ(Max)=150°C TA=25°C 0.1 1 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 20 0 0.0001 100 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 TJ(Max)=150°C TA=25°C 30 10 0.0 Zθ JA Normalized Transient Thermal Resistance Crss 50 10.0 ID (Amps) Ciss 1000 Capacitance (pF) VGS (Volts) 8 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance www.kexin.com.cn 5 MOSFET SMD Type Complementary Trench MOSFET AO4622 (KO4622) ■ P-Channel Typical Characterisitics 20 25 -10V -3.5V 15 -4.5V VDS=-5V -6V 15 -ID(A) -ID (A) 20 VGS=-2.5V 10 10 25°C 5 5 0 0 0 1 2 3 4 5 0.5 1.0 1.5 2.0 2.5 3.0 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 80 Normalized On-Resistance 1.6 70 RDS(ON) (mΩ ) -40°C 125°C 1.4 VGS=-2.5V 60 VGS=-2.5V ID=-5A 1.2 50 VGS=-4.5V 40 VGS=-4.5V ID=-4.2A 1 0.8 0.6 30 0 5 10 15 20 -50 25 -25 0 25 50 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+02 80 ID=-5A 1.0E+01 1.0E+00 125°C 1.0E-01 125°C -IS (A) RDS(ON) (mΩ ) 60 1.0E-02 1.0E-03 40 25°C 1.0E-04 25°C -40°C 1.0E-05 1.0E-06 20 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 6 www.kexin.com.cn 10 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 MOSFET SMD Type Complementary Trench MOSFET AO4622 (KO4622) ■ P-Channel Typical Characterisitics 1250 10 Capacitance (pF) -VGS (Volts) 1000 VDS=-10V ID=-5A 8 6 4 750 500 2 250 0 0 0 4 8 12 16 Crss 5 10 60 1ms 100µ 10ms RDS(ON) limited 1 0.1s 10s 0 DC 1s TJ(Max)=150°C TA=25°C 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 40 30 20 10 0 0.1 20 TJ(Max)=150°C TA=25°C 50 10µs Power (W) 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 100 ID (Amps) Coss 0 -Qg (nC) Figure 7: Gate-Charge Characteristics Zθ JA Thermal Resistance Ciss D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000 www.kexin.com.cn 7