MOSFET SMD Type N-Channel MOSFET AO4202 (KO4202) SOP-8 ■ Features ● VDS (V) = 30V ● ID = 19 A (VGS = 10V) 1.50 0.15 ● RDS(ON) ＜ 5.3mΩ (VGS = 10V) 0.21 -0.02 +0.04 ● RDS(ON) ＜ 7mΩ (VGS = 4.5V) 1 2 3 4 Source Source Source Gate 5 6 7 8 Drain Drain Drain Drain D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Avalanche Current Avalanche energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range L=0.1mH TA=25℃ TA=70℃ t ≤ 10s Steady-State ID 15 130 IAS,IAR 38 EAS,EAR 72 RthJA V 19 IDM PD Unit 3.1 2 A mJ W 40 75 RthJL 24 TJ 150 Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO4202 (KO4202) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS Gate Threshold Voltage VGS(th) Test Conditions ID=250 uA, VGS=0V Min Typ 30 1 VDS=30V, VGS=0V, TJ=55℃ 5 VDS=0V, VGS=±20V VDS=VGS , ID=250uA RDS(On) VGS=10V, ID=19A 1.3 Forward Transconductance ID(ON) gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) Qgs Gate Drain Charge Qgd Turn-On DelayTime td(on) Turn-On Rise Time tr Turn-Off DelayTime td(off) Turn-Off Fall Time VGS=10V, VDS=5V Body Diode Reverse Recovery Time trr Qrr Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD Marking 2 4202 KC**** www.kexin.com.cn 2.3 V VDS=5V, ID=19A VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=19A mΩ 7 A 65 S 1450 2200 500 940 38 110 0.3 1.1 23 35 10 16 3 5 2.5 6 pF Ω nC 6.5 7 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω ns 21 3.5 IF= 19A, dI/dt= 100A/us 12 18 25 38 nC 4 A 1 V IS=1A,VGS=0V Note : The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max. ■ Marking nA 130 tf Body Diode Reverse Recovery Charge ±100 6.5 TJ=125℃ Qg Gate Source Charge uA 5.3 VGS=4.5V, ID=15A On State Drain Current Unit V VDS=30V, VGS=0V VGS=10V, ID=19A Static Drain-Source On-Resistance Max MOSFET SMD Type N-Channel MOSFET AO4202 (KO4202) ■ Typical Characterisitics 100 80 VDS=5V 3.5V 80 60 60 ID(A) ID (A) 100 5V 6V 10V 40 40 3V 125°C 20 20 25°C VGS=2.5V 0 0 0 1 2 3 4 1 5 8 2.5 3 3.5 4 Normalized On-Resistance 1.8 VGS=4.5V 6 RDS(ON) (mΩ ) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 4 VGS=10V 2 VGS=10V ID=19A 1.6 1.4 1.2 VGS=4.5V ID=15A 1 0.8 0 0 5 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 10 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 20 ID=19A 1.0E+01 15 1.0E+00 10 IS (A) RDS(ON) (mΩ ) 1.5 125°C 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 5 1.0E-04 25°C 0 2 4 6 1.0E-05 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO4202 (KO4202) ■ Typical Characterisitics 3000 10 VDS=15V ID=19A 2500 Ciss Capacitance (pF) 8 VGS (Volts) 6 4 2 2000 1500 Coss 1000 500 0 Crss 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 100 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 IAR (A) Peak Avalanche Current 1000.0 100.0 TA=100°C TA=150°C ID (Amps) TA=25°C 10.0 10µs 100µs RDS(ON) limited 1ms 1.0 TA=125°C 10ms TJ(Max)=150°C TA=25°C 0.1 10s DC 0.0 10 0.01 1 10 100 1000 µs) . Time in avalanche, tA (µ Figure 12: Single Pulse Avalanche capability (Note C) 0.1 1 VDS (Volts) 10 100 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0 .0 0 0 0 1 0 .0 0 1 0 .1 10 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) 4 www.kexin.com.cn 1000 MOSFET SMD Type N-Channel MOSFET AO4202 (KO4202) ■ Typical Characterisitics Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) www.kexin.com.cn 5