MOSFET IC SMD Type N-Channel Enhancement MOSFET AO3414 (KO3414) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 50m (VGS = 4.5V) RDS(ON) 63m (VGS = 2.5V) RDS(ON) 87m (VGS = 1.8V) 1 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.05 0.1 -0.01 0-0.1 +0.1 0.38 -0.1 +0.1 0.97 -0.1 RDS(ON) 0.55 2.4 ID = 4.2A (VGS=4.5V) +0.1 1.3 -0.1 +0.1 -0.1 0.4 3 VDS (V) = 20V 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 V Continuous Drain Current *1 TA=25 TA=70 P u l s e d D r a i n Cu r r e n t * 2 Power Dissipation *1 TA=25 TA=70 Themal Resistance.Junction-to-Ambient *1 Themal Resistance.Junction-to-Case Junction and Storage Temperature Range ID IDM PD 4.2 3.2 A 15 1.4 0.9 W 125 /W RthJC 80 /W TJ, TSTG -55 to 150 RthJA *1The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 www.kexin.com.cn 1 MOSFET IC SMD Type AO3414 (KO3414) Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Gate Threshold Voltage VGS(th) Testconditions ID =250uA , V GS=0V Min RDS(ON) 20 ID(ON) Forward Transconductance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg Gate Source Charge Qgs V VDS=16V, VGS=0V ,TJ=55 5 VDS=0V, VGS= 100 nA 1 V 8V VDS=VGS ID=250uA 0.4 VGS=4.5V, ID=4.2A TJ=125 VGS=2.5V, ID=3.7A VGS=4.5V, VDS=5V 0.6 41 50 58 70 52 63 67 87 15 VDS=5V, ID=4.2A VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS= =10V, ID=4.2A A m A 11 S 436 pF 66 pF 44 pF 3 6.2 nC 1.6 nC Gate Drain Charge Qgd 0.5 nC Turn-On DelayTime tD(on) 5.5 ns Turn-On Rise Time tr 6.3 ns Turn-Off DelayTime tD(off) VGS=4.5V, VDS=10V, RL=2.7Ω,RGEN=6Ω Turn-Off FallTime tf Body Diode Reverse Recovery Time trr IF=4A, dI/dt=100A/ Body Diode Reverse Recovery Charge Qrr IF=4A, dI/dt=100A/ Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD Marking Marking 2 gFS Unit 1 VGS=1.8V, ID=3.2A On state drain current Max VDS=16V, VGS=0V VGS=4.5V, ID=4.2A Static Drain-Source On-Resistance Typ AE* www.kexin.com.cn IS=1A,VGS=0V 40 ns 12.7 ns s 12.3 ns s 3.5 0.76 nC 2 A 1 V MOSFET SMD Type AO3414 (KO3414) ■ Typical Characterisitics 16 10 8V 4.5V VDS=5V 8 2V 3V 2.5V 8 6 ID(A) ID (A) 12 4 VGS=1.5V 4 125°C 2 25°C 0 0 0 1 2 3 4 5 0 0.5 100 Normalized On-Resistance RDS(ON) (mΩ) 1.5 2 2.5 1.8 VGS=1.8V 80 VGS=2.5V 60 40 VGS=4.5V 20 0 4 8 VGS=2.5 1.6 VGS=1.8V 1.4 ID=4.2A VGS=4.5V 1.2 1 0.8 12 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 100 90 1E+00 ID=4.2A 80 125°C 1E-01 70 IS (A) RDS(ON) (mΩ) 1 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 125°C 60 50 25°C 1E-03 25°C 40 1E-02 1E-04 30 1E-05 20 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.kexin.com.cn 3 MOSFET SMD Type AO3414 (KO3414) ■ Typical Characterisitics 800 5 VGS (Volts) Capacitance (pF) VDS=10V ID=4.2A 4 3 2 1 600 Ciss 400 Coss 200 0 0 0 2 4 6 0 8 10.0 10 20 TJ(Max)=150°C TA=25°C 15 RDS(ON) limited 0.1s 1.0 10µs 1ms 10ms 20 10 5 1s 10s DC 0.1 0.1 15 TJ(Max)=150°C TA=25°C 100µs Power (W) 100.0 5 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics ID (Amps) Crss 1 10 0 0.001 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) . ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W In descending order 1 PD 0.1 0.01 0.00001 Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4 www.kexin.com.cn 100 1000