MOSFET SMD Type N-Channel MOSFET AO4286 (KO4286) SOP-8 ■ Features ● VDS (V) = 100V ● ID = 4 A (VGS = 10V) 1.50 0.15 ● RDS(ON) ＜ 68mΩ (VGS = 10V) 0.21 -0.02 +0.04 ● RDS(ON) ＜ 92mΩ (VGS = 4.5V) 1 2 3 4 D Source Source Source Gate 5 6 7 8 Drain Drain Drain Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current IDM Avalanche Current Avalanche energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range ID L=0.1mH TA=25℃ TA=70℃ t ≤ 10s Steady-State 25 IAS 4 0.8 RthJA V 4 3 EAS PD Unit 2.5 1.6 A mJ W 50 85 RthJL 30 TJ 150 Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO4286 (KO4286) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions ID=250 uA, VGS=0V Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V Gate Threshold Voltage VGS(th) VDS=VGS , ID=250uA Static Drain-Source On-Resistance RDS(On) Min Typ 100 VDS=100V, VGS=0V 1 VDS=100V, VGS=0V, TJ=55℃ 5 VGS=10V, ID=4A 1.7 ID(ON) gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) Gate Source Charge VGS=10V, VDS=5V VDS=5V, ID=4A VGS=0V, VDS=50V, f=1MHz 3 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=50V, ID=4A 7 10 2.8 5 1.1 Turn-On Rise Time tr Turn-Off DelayTime td(off) Qrr IS Diode Forward Voltage VSD VGS=10V, VDS=50V, RL=12.5Ω, RGEN=3Ω Marking 2 4286 KC**** www.kexin.com.cn nC 2.5 ns 18 2.5 IF= 4A, dI/dt= 500A/us 15 53 IS=1A,VGS=0V Note : The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max. ■ Marking Ω 5.8 6 Maximum Body-Diode Continuous Current pF 30 1.2 Body Diode Reverse Recovery Charge S 390 Qgd trr mΩ A 13 td(on) Body Diode Reverse Recovery Time V 25 Turn-On DelayTime tf 2.9 92 Gate Drain Charge Turn-Off Fall Time nA 68 Qg Qgs uA ±100 127 TJ=125℃ VGS=4.5V, ID=3A Forward Transconductance Unit V VGS=10V, ID=4A On State Drain Current Max nC 3 A 1 V MOSFET SMD Type N-Channel MOSFET AO4286 (KO4286) ■ Typical Characterisitics 25 10V VDS=5V 4.5V 20 15 15 4V 10 ID(A) ID (A) 20 6V 10 3.5V 125°C 5 5 25°C VGS=3V 0 0 0 1 2 3 4 0 5 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 90 Normalized On-Resistance 2.4 VGS=4.5V 80 RDS(ON) (mΩ Ω) 1 70 60 VGS=10V 50 2.2 2 VGS=10V ID=4A 1.8 1.6 1.4 VGS=4.5V ID=3A 1.2 1 0.8 40 0 2 0 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 180 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 ID=4A 160 25 1.0E+00 100 80 125°C 1.0E-01 125°C 120 IS (A) RDS(ON) (mΩ Ω) 140 1.0E-02 25°C 1.0E-03 60 25°C 40 20 1.0E-04 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO4286 (KO4286) ■ Typical Characterisitics 10 500 VDS=50V ID=4A 450 Ciss 400 Capacitance (pF) VGS (Volts) 8 6 4 2 350 300 250 200 Coss 150 100 Crss 50 0 0 0 2 4 6 0 20 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 200 100.0 10µs10µs 10.0 100µs 1.0 1ms 10ms 0.1 TJ(Max)=150°C TA=25°C 0.1 DC 1 10 VDS (Volts) 100 1000 . Zθ JC Normalized Transient Thermal Resistance 1 80 0 0.0001 0.001 0.01 0.1 1 0 10 100 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 120 40 0.0 0.01 TJ(Max)=150°C TA=25°C 160 Power (W) ID (Amps) RDS(ON) 100 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=85°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4 www.kexin.com.cn 100 1000