Transistors IC SMD Type NPN Transistors 2SC1815 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Power dissipation 1 0.55 Features +0.1 1.3 -0.1 +0.1 2.4 -0.1 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.1 0.97 -0.1 +0.05 0.1 -0.01 1.Base 0-0.1 +0.1 0.38 -0.1 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to Base Voltage Parameter VCBO 60 V Collector to Emitter V oltage VCEO 50 V Emitter to Base Voltage VEBO 5 V Collector Current to Continuous IC 150 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 125 Storage Temperature Tstg -55 to 125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditions Collector to base breakdown voltage VCBO Ic= 100 Collector to emitter breakdown voltage VCEO Ic= 0.1mA, IB=0 A, IE=0 Min Typ Max Unit 60 V 50 V Collector cut to off current ICBO VCB=60V, IE=0 0.1 A Collector cut to off current ICEO VCE=40V, IB=0 1 A Emitter cut to off current IEBO VEB= 5V, IC=0 0.1 A hFE VCE= 6V, IC= 2mA DC current gain 130 400 Collector to emitter saturation voltage VCE(sat) IC=100 mA, IB= 10mA 0.25 V Base to emitter saturation voltage VBE(sat) IC=100 mA, IB= 10mA 1 V Transition frequency fT VCE=10V, IC= 1mA,f=30MHz 80 MHz hFE Classification Type 2SC1815-L 2SC1815-H Range 130-200 200-400 Marking HFL HF www.kexin.com.cn 1 Transistors IC SMD Type 2SC1815 Typlcal Characteristics IC 5 —— V CE COMMON EMITTER Ta=25℃ hFE 12uA DC CURRENT GAIN 10uA 3 —— I C Ta=100℃ 4 IC (mA) 14uA COLLECTOR CURRENT h FE 1000 16uA 8uA 2 6uA Ta=25℃ 100 4uA 1 IB=2uA 0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE 10 1 VCE (V) V BEsat —— I C 100 150 10 COLLECTOR CURRENT IC (mA) —— I C 2000 500 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) V CEsat COMMON EMITTER VCE= 6V 10 0.1 100 Ta=100 ℃ Ta=25℃ 1000 Ta=25℃ Ta=100 ℃ β=10 β=10 10 1 10 COLLECTOR CURREMT IC IC 100 (mA) —— V BE fT IC (mA) —— I C fT (mA) (MHz) COMMON EMITTER VCE= 6V 100 150 10 COLLECTOR CURREMT TRANSITION FREQUENCY IC 10 T= a 25 ℃ T= a 10 0℃ COLLECTOR CURRENT 1 1000 150 100 1 0.1 0 50 300 600 900 C ob /Cib —— V CB /VEB 1 10 PC 250 COLLECTOR POWER DISSIPATION PC (mW) C Cib Cob CAPACITANCE COMMON EMITTER VCE=10V Ta=25℃ COLLECTOR CURRENT Ta=25 ℃ 10 100 10 0.1 1200 BASE-EMMITER VOLTAGE VBE (mV) f=1MHz IE=0/IC=0 (pF) 100 0.1 150 IC —— 100 (mA) Ta 200 150 100 50 0.1 0.1 1 REVERSE VOLTAGE 2 www.kexin.com.cn 10 V (V) 20 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) 150