SMD Type Thyristor

Thyristor
SMD Type
TRIACS Thyristor
BT137M series (KT137M series)
TO-252
■ Features
+0.15
1.50 -0.15
Unit: mm
+0.15
6.50-0.15
+0.2
5.30-0.2
+0.1
2.30 -0.1
+0.8
0.50 -0.7
0.127
max
0.60-+ 0.1
0.1
2.3
+0.15
4 .60 -0.15
T2
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
● Non-repetitive peak on-state current :65A
+0.15
0.50 -0.15
+0.2
9.70 -0.2
● RMS on-state current :8A
+0.15
5.55 -0.15
● Repetitive peak off-state voltages :500V/600V/800V
1 Gate
2 Main Terminal 2
3 Main Terminal 1
T1
G
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Repetitive Peak Off-state Voltages
BT137M
-500
BT137M
-600
BT137M
-800
Unit
VDRM
500
600
800
V
IT(RMS)
RMS on-state Current Tamb ≤ 102 °C
Non-Repetitive Peak on-state Current
Symbol
t=20ms
t=16.7ms
ITSM
8
65
A
71
2
It
21
A 2s
Peak Gate Current
IGM
2
A
Peak Gate Voltage
VGM
5
V
Circuit Fusing Considerations
t = 10ms
Peak Gate Power
Average Gate Power
t = 20ms
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Mounting Base
junction Temperature
Storage Temperature range
full cycle
half cycle
PGM
5
PG(AV)
0.5
RthJA
75
RthJMB
2
W
K/W
2.4
TJ
125
Tstg
-40 to 150
℃
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Thyristor
SMD Type
TRIACS Thyristor
BT137M series (KT137M series)
■ Electrical Characteristics (Ta = 25℃, unless otherwise noted.)
Parameter
Test Conditions
Symbol
Min
BT137M-500,BT137M-500F,BT137-500G
Repetitive Peak off-state
Voltages
Off-state Leakage Current
VDRM
ID
On-state Voltage
VTM
Gate Trigger Voltage
VGT
600
BT137M-800,BT137M-800F,BT137-800G
800
0.5
IT=10A
1.65
VD=12V, IT=0.1A
1.5
VD=400V, IT=0.1A, TJ = 25℃
VD=12V,
IT =0.1A
VD=12V,
IGT =0.1A
T2+ G-
50
BT137M-500/600/800
35
T2- G-
50
BT137M-500/600/800
70
T2- G+
BT137M-500G/600G/800G
BT137M-500/600/800
30
45
BT137M-500/600/800
45
T2+ G-
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45
BT137M-500G/600G/800G
60
BT137M-500/600/800
30
T2- G-
30
BT137M-500G/600G/800G
45
BT137M-500/600/800
45
BT137M-500F/600F/800F
2
30
BT137M-500G/600G/800G
T2- G+
BT137M-500G/600G/800G
IH
70
100
T2+ G+
VD=12V ,IGT=0.1A
mA
25
BT137M-500G/600G/800G
BT137M-500F/600F/800F
Holding Current
25
BT137M-500G/600G/800G
BT137M-500F/600F/800F
IL
25
35
BT137M-500F/600F/800F
Latching Current
T2+ G+
BT137M-500/600/800
BT137M-500F/600F/800F
V
35
50
BT137M-500F/600F/800F
mA
0.25
BT137M-500G/600G/800G
BT137M-500F/600F/800F
Unit
V
VD = VDRM(max)
BT137M-500F/600F/800F
IGT
Max
500
ID= 100uA BT137M-600,BT137M-600F,BT137-600G
BT137M-500/600/800
Gate Trigger Current
Typ.
45
60
BT137M-500/600/800
20
BT137M-500F/600F/800F
20
BT137M-500G/600G/800G
40
mA
Thyristor
SMD Type
TRIACS Thyristor
BT137M series (KT137M series)
■ Electrical Characteristics (Ta = 25℃, unless otherwise noted.)
Repetitive rate of rise of on-state
current after triggering
dIT/dt
ITM = 12 A , IG = 0.2 A, dIG/dt = 0.2 A/us
T2+ G+
50
T2+ G-
50
T2- G-
50
T2- G+
Critical Rate of rise of off-state
Voltage
VDM=67% VDRM(max);
Tj =125℃
exponential waveform;
dVD/dt
A/us
10
BT137M-500/600/800
100
BT137M-500F/600F/800F
50
BT137M-500G/600G/800G
200
V/us
VDM = 400V , TJ= 95 °C
Critical rate of change of
commutating voltage
dVcom/dt
IT(RMS) = 8 A ,
20
V/us
2
us
dIcom/dt = 3.6 A/us; gate open circuit
Gate Controlled turn-on time
ITM=12A; VD=VDRM(max),IG=0.1A; dIG/dt=5A/us
tgt
■ Typical Characterisitics
12
Tmb(max) / C
101
= 180
Ptot / W
120
10
105
90
1
8
109
60
30
6
117
2
121
0
2
4
6
IT(RMS) / A
125
10
8
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
1000
BT137
BT137
ITSM / A
I TSM
IT
IT(RMS) / A
102 C
8
6
113
4
0
10
time
4
2
0
-50
0
50
Tmb / C
100
150
Fig.3. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
25
IT(RMS) / A
BT137
20
Tj initial = 25 C max
15
100
dI T /dt limit
10
T2- G+ quadrant
10
10us
100us
5
1ms
T/s
10ms
100ms
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
0
0.01
0.1
1
surge duration / s
10
Fig.4. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 102˚C.
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Thyristor
SMD Type
TRIACS Thyristor
BT137M series (KT137M series)
■ Typical Characterisitics
80
ITSM / A
ITSM
IT
70
T
60
1.6
1.4
time
Tj initial = 25 C max
50
VGT(Tj)
VGT(25 C)
1.2
40
1
30
0.8
20
0.6
10
0
1
10
100
Number of cycles at 50Hz
1000
Fig.5. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
3
IGT(Tj)
IGT(25 C)
T2+ G+
T2+ GT2- GT2- G+
2
0
50
Tj / C
100
150
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
25
BT137
2.5
0.4
-50
BT137
IT / A
Tj = 125 C
Tj = 25 C
20
max
typ
Vo = 1.264 V
Rs = 0.0378 Ohms
15
1.5
10
1
5
0.5
0
-50
0
50
Tj / C
100
150
.
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
3
IL(Tj)
IL(25 C)
0
0
1
1.5
VT / V
2
2.5
3
Fig.8. Typical and maximum on-state characteristic.
10
TRIAC
0.5
BT137
Zth j-mb (K/W)
2.5
unidirectional
1
2
bidirectional
1.5
0.1
1
P
D
tp
0.5
0
-50
t
0
50
Tj / C
100
150
Fig.9. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
4
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0.01
10us
0.1ms
1ms
10ms
0.1s
1s
10s
tp / s
Fig.10. Transient thermal impedance Zth j-mb, versus
pulse width tp.
Thyristor
SMD Type
TRIACS Thyristor
BT137M series (KT137M series)
■ Typical Characterisitics
3
IH(Tj)
IH(25C)
1000
dV/dt (V/us)
off-state dV/dt limit
BT137...G SERIES
2.5
BT137 SERIES
100
2
BT137...F SERIES
1.5
dIcom/dt =
10 A/ms
10
1
7.9
6.1
4.7
3.6
2.8
0.5
0
-50
0
50
Tj / C
100
150
Fig.11. Normalised holding current I H(Tj)/ IH(25˚C),
versus junction temperature Tj.
1
0
50
Tj / C
100
150
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dIT/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dIT/dt.
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