Transistors SMD Type PNP Transistors 2SB1628 1.70 0.1 ■ Features ● High current capacitance ● Low collector saturation voltage 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO -20 Collector - Emitter Voltage VCEO -16 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -3 Collector Current - Pulse ICP -5 Collector Power Dissipation PC 2 Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature range Unit V A W ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -20 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -16 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -6 Collector-base cut-off current ICBO VCB= -20 V , IE=0 -100 Emitter cut-off current IEBO VEB= -6V , IC=0 -100 IC=-2 A, IB=-100mA -0.35 IC=-3 A, IB=-150mA -0.55 IC=-2 A, IB=-100mA -1.2 Collector-emitter saturation voltage VCE(sat) Base - emitter saturation voltage VBE(sat) Base - emitter voltage DC current gain VCE= -2V, IC= -50mA -0.6 -0.7 hFE(1) VCE= -2V, IC= -500mA 140 560 hFE(2) VCE=- 2V, IC= -3 A 70 ton Storage time tstg Fall time tf Collector output capacitance Cob Transition frequency V VBE Turn-on time fT Unit nA V 70 IC = −1.0 A, VCC = −10 V IB1 = −IB2 = −0.1 A RL = 10 Ω 110 VCB= -10V, IE= 0,f=1MHz 45 pF VCE= -3V, IE= 500mA 320 MHz ns 40 ■ Classification of hfe(1) Type 2SB1628-X 2SB1628-Y 2SB1628-Z Range 140-280 200-400 280-560 Marking ZX ZY ZZ www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SB1628 ■ Typical Characterisitics 2 www.kexin.com.cn Transistors SMD Type PNP Transistors 2SB1628 ■ Typical Characterisitics www.kexin.com.cn 3