Transistors SMD Type SMD Type PNP Transistors 2SB805 Features 1.70 High collector to emitter voltage: VCEO 0.1 -100V. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base v oltage Parameter VCBO -100 V Collector-emitter v oltage VCEO -100 V Emitter-base voltage VEBO -5 V IC -0.7 A Collector current Collector current (pulse) *1 IC(pu) -1.2 A Collector power dissipation Pc 2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 *1. PW 10ms,duty cycle 50% Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= -100 μA， IE= 0 -100 Collector- emitter breakdown voltage VCEO Ic=- 1 mA， IB= 0 -100 Emitter - base breakdown voltage VEBO IE= -100μA， IC= 0 Collector-base cut-off current ICBO VCB= -100 V , IE= 0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 -0.6 V -5 Collector-emitter saturation voltage * VCE(sat) IC=-500 mA, IB=-50mA Base - emitter saturation voltage * VBE(sat) IC=-500 mA, IB=-50mA VBE VCE= -10V, IC= -10mA -0.55 VCE= -1V, IC= -100mA 90 200 VCE= -1V, IC= -5mA 45 200 Base - emitter voltage DC current gain * * hFE Collector output capacitance Cob Transition frequency * PW fT 350us,duty cycle Unit -1.5 uA V -0.68 400 VCB= -10V, IE=0,f=1MHz 14 pF VCE= -10V, IC= -10mA 75 MHz 2% hFE Classification(1) Type 2SB805-M 2SB805-L 2SB805-K Range 90-180 135-270 200-400 Marking KM KL KK www.kexin.com.cn 1 Transistors SMD Type Type SMD 2SB805 ■ Typical Characterisitics 2 www.kexin.com.cn Transistors SMD Type SMD Type 2SB805 ■ Typical Characterisitics www.kexin.com.cn 3