Transistors SMD Type PNP Transistors 2SB736 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 1 0.55 ● Complimentary to 2SD780. +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● High DC current gain hFE:200(TYP) 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.1 0.97 -0.1 +0.05 0.1 -0.01 1.Base 0-0.1 +0.1 0.38 -0.1 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO -60 Collector - Emitter Voltage VCEO -60 Emitter - Base Voltage Unit V VEBO -5 Collector Current - Continuous IC -300 mA Collector Power Dissipation PC 200 mW TJ 150 Tstg -55 to 150 Junction Temperature Storage Temperature range ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -60 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= - 50V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage Base - emitter saturation voltage Base - emitter voltage DC current gain (Note.1) (Note.1) (Note.1) VCE(sat) IC=-300 mA, IB=-30mA VBE(sat) IC=-300 mA, IB=-30mA VBE hFE (Note.1) Collector output capacitance Cob Transition frequency fT Unit V -0.35 -0.6 -1.2 VCE= -6V, IC= -10mA -600 -660 -700 VCE= -1 V, IC= -50mA 110 200 400 VCE= -2V, IC= -300mA 30 uA V mV VCB= -6V, IE= 0,f=1MHz 13 pF VCE= -6V, IE = 10mA 100 MHz Note.1:Pulse test : Pulse width ≤350μs,Duty Cycle≤2%. ■ Classification of hfe(1) Type 2SB736-BW1 2SB736-BW2 2SB736-BW3 2SB736-BW4 2SB736-BW5 Range 110-180 135-220 170-270 200-320 250-400 Marking BW1 BW2 BW3 BW4 BW5 www.kexin.com.cn 1 Transistors SMD Type PNP Transistors ■ Typical Characterisitics 2 www.kexin.com.cn 2SB736 Transistors SMD Type PNP Transistors 2SB736 ■ Typical Characterisitics www.kexin.com.cn 3