Transistors SMD Type PNP Transistors 2SB1396 ■ Features 1.70 0.1 ● Low collector to emitter saturation voltage ● Large current capacity 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCEO -10 Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -3 Collector Current - Pulse ICP -5 Collector Power Dissipation PC 1.3 Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature range Unit V A W ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= -100 uA， IE=0 -15 Collector- emitter breakdown voltage VCEO Ic= -1 mA, RBE=∞ -10 Emitter - base breakdown voltage VEBO IE= -100 uA， IC=0 -7 Collector-base cut-off current ICBO VCB= -12V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -6V , IC=0 -0.1 V Collector-emitter saturation voltage VCE(sat) IC=-1.5 A, IB=-30 mA -0.22 -0.4 Base - emitter saturation voltage VBE(sat) IC=-1.5 A, IB=-30 mA -0.9 -1.2 DC current gain hFE Collector output capacitance Cob Transition frequency fT VCE= -2V, IC= -500 mA 140 VCE= -2V, IC= -3 A 70 Unit uA V 560 VCB= -10V, IE= 0,f=1MHz 26 pF VCE= -2V, IC= -300 mA 400 MHz ■ Classification of hfe(1) Type 2SB1396-S 2SB1396-T 2SB1396-U Range 140-280 200-400 280-560 Marking BO S* BO T* BO U* www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SB1396 ■ Typical Characterisitics 2 www.kexin.com.cn Transistors SMD Type PNP Transistors 2SB1396 ■ Typical Characterisitics www.kexin.com.cn 3