Transistors SMD Type Type SMD Type SMD NPN IC Transistors KST9018 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ● High current gain bandwidth product. 1 ● power dissipation.(PC=200mW) 0.55 Features ■ Features +0.1 1.3 -0.1 +0.1 2.4 -0.1 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.1 0.97 -0.1 +0.05 0.1 -0.01 1.Base 0-0.1 +0.1 0.38 -0.1 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25 ℃ Parameter Symbol Rating Unit Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 15 V Emitter to Base Voltage VEBO 5 V Collector Current to Continuous IC 50 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25 Parameter Symbol Testconditions Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO IC= 100 uA, I E=0 30 V Collector to emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 15 V Emitter to base breakdown voltage V(BR)EBO IE=100 uA, I C=0 5 V Collector cut to off current ICBO VCB=12V, IE=0 0.05 uA Emitter cut to off current IEBO VEB= 3V, IC=0 0.1 uA DC current gain hFE VCE=5V, IC= 1mA Collector to emitter saturation voltage VCE(sat) IC=10mA, IB= 1mA 0.5 V Base to emitter saturation voltage VBE(sat) IC=10mA, IB= 1mA 1.4 V Transition frequency fT VCE=5V, IC= 5mA,f=400MHz 70 600 190 MHz ■ Classification of hfe Type KST9018-L KST9018-H Range 70-105 105-190 Marking J8 www.kexin.com.cn 1