Transistors SMD Type PNP Transistors 2SB799 ■ Features 1.70 0.1 ● Low Collector Saturation Voltage: VCE(sat)< -0.4V (Ic = -500mA, IB = -50mA ) ● Complement to 2SD1000 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -0.7 Collector Current - Pulse (Note.1) ICP -1 Collector Power Dissipation PC 2 Junction Temperature Storage Temperature range TJ 150 Tstg -55 to 150 Unit V A W ℃ Note.1: PW≦10ms,Duty Cycle≦50% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -50 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -60 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage Base - emitter saturation voltage Base - emitter voltage DC current gain (Note.1) (Note.1) (Note.1) (Note.1) Collector output capacitance IC=-500mA, IB=-50mA -0.16 -0.4 VBE(sat) IC=-500mA, IB=-50mA -0.9 -1.2 VBE VCE= -6V, IC= -10mA -600 -630 -700 VCE= -1V, IC= -100mA 90 200 400 VCE= -1V, IC= -500mA 50 120 Cob Transition frequency V VCE(sat) hFE fT Unit uA V mV VCB= -6V, IE= 0 mA,f=1MHz 25 pF VCE= -6V, IE = 10mA 120 MHz Note.1:Pulse test : Pulse width ≤350μs,Duty Cycle≤2%. ■ Classification of hfe(1) Type 2SB799-M 2SB799-L 2SB799-K Range 90-180 135-270 200-400 Marking MM ML MK www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SB799 ■ Typical Characterisitics 2 www.kexin.com.cn Transistors SMD Type PNP Transistors 2SB799 ■ Typical Characterisitics www.kexin.com.cn 3