Diodes DIP Type Schottky Diodes MBRF20100ACT TO-220F 3.30 0.10 2.54 0.20 ø3.18 0.10 (7.00) (0.70) ● Low forward voltage drop 15.80 0.20 ● High frequency properties and switching speed (1.00x45 ) MAX1.47 0.80 0.10 0 (3 9.75 0.30 ● Guard ring for over-voltage protection 15.87 0.20 6.68 0.20 ■ Features Unit:mm 10.16 0.20 ) #1 +0.10 0.50 –0.05 2.76 0.20 2.54TYP [2.54 0.20] 9.40 0.20 4.70 0.20 0.35 0.10 2.54TYP [2.54 0.20] 1. Anode 2.Cathode 3. Anode ■ Absolute Maximum Ratings Ta = 25℃ Parameter Repetitive Reverse Voltage Symbol Rating VRRM 100 VR 100 IF(AV) 16 IFSM 140 TJ 150 Tstg -65 to 150 DC Reverse Voltage DC Forward Current Tc = 105℃ Peak forward surge current @ 60Hz Sine Half-Sine Wave Junction Temperature Storage temperature range Unit V A ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Reverse breakdown voltage Forward voltage (Note.1) Reverse voltage leakage current (Note.1) Symbol VRM VF IR Test Conditions ID = 200uA Min Typ Max 100 Unit V IF= 8 A ,Tc=25℃ 850 IF= 8 A ,Tc=125℃ 740 Tc= 25℃ 0.1 Tc=100℃ 50 mV mA Note.1: Pulse Test: Pulse Width=300μs, Duty Cycle=2% www.kexin.com.cn 1 Diodes DIP Type Schottky Diodes MBRF20100ACT INSTANTANEOUS FORWARD CURRENT AMPERES AVERAGE FORWARD CURRENT, AMPERES ■ Typical Characterisitics 10 8 6 4 2 0 0 50 100 150 20 20. 30. 40V 10 8 6 4 50. 60V 80. 100V 2 1.0 .8 .6 .4 T J = 25 ℃ PULSE WIDTH = 200us .2 .1 .4 .5 .6 Fig. 1-FORWARD CURRENT DERATING CURVE 150 130 110 90 70 8.3ms SINGLE HALF SINE WAVE JEDEC METHOD 50 30 20 10 1 2 5 10 20 50 100 Fig. 3-MAXIMUM NON-REPETITIVE SURGE CURRENT www.kexin.com.cn .8 9 1.0 1.1 Fig. 2-TYPICAL INSTNATANEOUS FORWARD CHARACTERISTIC NO. OF CYCLES AT 60Hz 2 .7 INSTANTANEOUS FORWARD CHARACTERISTIC CASE TEMPERATURE, PEAK FORWARD SURGE CURRENT, AMPERES 40