MOSFET SMD Type P-Channel MOSFET 2SJ210 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ● ID =-200m A 1 0.55 ● VDS (V) =-60V +0.1 1.3 -0.1 +0.1 2.4 -0.1 ■ Features 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 ● RDS(ON) ＜ 10Ω (VGS =-10V) +0.05 0.1 -0.01 +0.1 0.97 -0.1 ● RDS(ON) ＜ 15Ω (VGS =-4V) 0-0.1 +0.1 0.38 -0.1 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Drain-Source Voltage Parameter VDS -60 Gate-Source Voltage VGS ±20 ID -200 Pulsed Drain Current (Note.1) IDM -400 Power Dissipation PD 200 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 Continuous Drain Current Unit V mA mW ℃ Note.1: PW ≤ 10ms,Duty Cycle ≤ 50% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=-60V, VGS=0V Gate-Body leakage current IGSS VDS=0V, VGS=±20V Gate Cut off Voltage VGS(off) Static Drain-Source On-Resistance RDS(On) Forward Transconductance gFS VDS=-5V,ID=-1uA Min Typ -1.4 VDS=-5V, ID=-10mA 20 45 120 tf V Ω mS 27 3 Turn-Off Fall Time -2.4 10 Crss td(off) uA 15 Reverse Transfer Capacitance Turn-Off DelayTime ±1 VGS=-10V, ID=-10mA Ciss tr uA VGS=-4V, ID=-10mA Coss td(on) -1 V Output Capacitance Turn-On DelayTime Unit -60 Input Capacitance Turn-On Rise Time Max VGS=0V, VDS=-5V, f=1MHz VGS(on)=-4V, VDS=-5V, ID=-10mA, RL=500Ω,RGEN=10Ω 21 190 150 pF ns 180 ■ Marking Marking H16 www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET 2SJ210 ■ Typical Characterisitics 2 www.kexin.com.cn MOSFET SMD Type P-Channel MOSFET 2SJ210 ■ Typical Characterisitics www.kexin.com.cn 3