DIP Type Transistors

Transistors
DIP Type
NPN Darlington Transistors
TIP120
(KIP120)
TO-220
3.30 ± 0.10
10.16 ± 0.20
2.54 ± 0.20
ø3.18 ± 0.10
■ Features
15.80 ± 0.20
● Collector Current Capability IC=5A
● Collector Emitter Voltage VCEO=60 V
15.87 ± 0.20
6.68 ± 0.20
(0.70)
(1.00x45 )
MAX1.47
0.80 ± 0.10
0
)
1 #12 3
(3
9.75 ± 0.30
● Medium Power Complementary Silicon Transistors
0.35 ± 0.10
+0.10
0.50 –0.05
2.76 ± 0.20
2.54TYP
[2.54 ± 0.20 ]
4.70 ± 0.20
2.54TYP
[2.54 ± 0.20 ]
9.40 ± 0.20
1. Base
2. Collector
3. Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Collector - Base Voltage
VCBO
60
Collector - Emitter Voltage
VCEO
60
Emitter - Base Voltage
VEBO
5
IC
5
A
W
Collector Current - Continuous
PC
2
Thermal Resistance Junction to Ambient
RθJA
62.5
Thermal Resistance Junction to Case
RθJC
1.92
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
TJ
150
Tstg
-55 to 150
Unit
V
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Collector- base breakdown voltage
VCBO
Ic= 1 mA, IE= 0
60
Collector- emitter breakdown voltage
VCEO
Ic= 30 mA, IB= 0
60
Emitter - base breakdown voltage
VEBO
IE= 1 mA, IC= 0
5
Collector-base cut-off current
ICBO
VCB= 60 V , IE= 0
0.2
Collector- emitter cut-off current
ICEO
VCE= 30 V , IE= 0
0.5
Emitter cut-off current
IEBO
VEB= 5V , IC=0
2
IC=3 A, IB=12 mA
2
IC=5 A, IB=20 mA
4
1.2
Collector-emitter saturation voltage
VCE(sat)
Base - emitter saturation voltage
VBE(sat)
IC=3 A, IB=12 mA
VBE
VCE= 3V, IC= 3 A
Base-emitter voltage
DC current gain
hFE
Collector output capacitance
Cob
V
mA
V
2.5
VCE= 3V, IC= 0.5A
1000
VCE= 3V, IC= 3 A
1000
VCB= 10V, IE=0,f=0.1MHz
Unit
200
pF
www.kexin.com.cn
1