Transistors SMD Type PNP Transistors 2SA1364 1.70 Features 0.1 High Voltage VCEO = -60V High Collector Current (IC = -1A) High Collector Dissipation PC = 500mW Small Package For Mounting 0.42 0.1 0.46 0.1 Complementary to 2SC3444 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -6 V Collector Current IC -1 A Peak Collector Current ICM -2 A Collector Power Dissipation PC 500 mW Jumction temperature Tj 150 Tstg -55 to +150 Storage temperature Range Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -2 mA， IB=0 -60 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -6 Collector-base cut-off current ICBO VCB= -50 V , IE=0 -200 Emitter cut-off current IEBO VEB= -4V , IC=0 -200 Unit V Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=- 25mA Base - emitter saturation voltage VBE(sat) IC=-500mA, IB=- 25mA DC current gain hFE VCE= -4V, IC= -100mA Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 22 pF VCE= -2V, IE= 10mA 85 MHz Transition frequency fT -0.11 -0.3 nA -1.2 55 V 300 ■ Classification of hfe Type 2SA1364-C 2SA1364-D 2SA1364-E Range 55-110 90-180 150-300 Marking CC CD CE www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SA1364 ■ Typical Characterisitics 2 www.kexin.com.cn Transistors SMD Type PNP Transistors 2SA1364 ■ Typical Characterisitics www.kexin.com.cn 3