Transistors SMD Type PNP Transistors MMBT3906DW (KMBT3906DW) ■ Features ● Epitaxial planar die construction ● Ideal for low power amplification and switching ● Dual PNP Transistors ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO -40 Collector - Emitter Voltage VCEO -40 Emitter - Base Voltage VEBO -5 IC -200 PC 150 mW RθJA 625 ℃/W Collector Current - Continuous Collector Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature range TJ 150 Tstg -55 to 150 Unit V mA ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -40 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -40 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -40 V , IE=0 -100 Collector- emittercut-off current ICEX VCE= -30 V , VEB(OFF)= 3V -50 Emitter cut-off current IEBO VEB= -5V , IC=0 -50 Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Delay time VCE(sat) VBE(sat) IC=-10 mA, IB=-1mA IC=-50 mA, IB=-5mA 60 hFE(2) VCE=- 1V, IC= -10mA 100 hFE(3) VCE=- 1V, IC= -50mA 60 tr Storage time ts Fall time tf NF VCE=-5V,Ic=-0.1mA,f=1KHz,Rg=1KΩ Cob VCB= -5V, IC= -0.1mA,f=1MHz,Rg=1KΩ fT VCE= -20V, IC= -10mA,f=100MHz V 300 35 225 VCC=-3V, IC=-10mA , IB1=-IB2=-1mA Noise figure -0.85 35 VCC=-3V, VBE= 0.5V IC=-10mA , IB1=-IB2=-1mA Collector output capacitance nA -0.95 VCE= -1V, IC= -0.1mA Rise time Transition frequency -0.4 -0.65 hFE(1) td V -0.25 IC=-50 mA, IB=-5mA IC=-10 mA, IB=-1mA Unit ns 75 250 4 dB 4.5 pF MHz ■ Marking Marking K3N www.kexin.com.cn 1