Transistors SMD Type NPN Transistors 2SC3444 ■ Features 1.70 0.1 ● High Voltage ● High collector current ● Low collector to emitter saturation voltage ● High collector dissipation Pc=500mW 0.42 0.1 0.46 0.1 ● Small package for mounting ● Complementary to 2SA1364 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 1 Peak Collector Current ICM 2 Collector Power Dissipation PC 500 Junction Temperature Storage Temperature Range TJ 150 Tstg -55 to 150 Unit V A mW ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100uA， IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 2mA， RBE= ∞ 60 Emitter - base breakdown voltage VEBO IE= 100uA， IC= 0 6 Collector-base cut-off current ICBO VCB= 50V , IE= 0 0.2 Emitter cut-off current IEBO VEB= 4V , IC=0 0.2 Unit V Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=25mA Base - emitter saturation voltage VBE(sat) IC=500mA, IB=25mA DC current gain hFE VCE= 4V, IC= 100mA Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 14 pF VCE= 2V, IC= 10mA 80 MHz Transition frequency fT 0.11 0.3 uA 1.2 55 V 300 ■ Classification of hfe Type 2SC3444-C 2SC3444-D 2SC3444-E Range 55-110 90-180 150-300 Marking DC DD DE www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SC3444 ■ Typical Characterisitics 2 www.kexin.com.cn Transistors SMD Type NPN Transistors 2SC3444 ■ Typical Characterisitics www.kexin.com.cn 3