Transistors SMD Type NPN Transistors BF622 (KF622) 1.70 0.1 ■ Features ● Low current ● High voltage 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 250 Collector - Emitter Voltage VCEO 250 Emitter - Base Voltage VEBO 5 Unit V Collector Current - Continuous IC 50 mA Collector Power Dissipation PC 500 mW RθJA 250 ℃/W Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Range TJ 150 Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 250 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 250 Typ Max V Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 Collector-base cut-off current ICBO VCB= 200 V , IE= 0 100 Emitter cut-off current IEBO VEB= 5V , IC=0 50 5 Collector-emitter saturation voltage VCE(sat) IC=30 mA, IB=5mA 0.6 Base - emitter saturation voltage VBE(sat) IC=30 mA, IB=5mA 1.2 DC current gain hFE Transition frequency fT Unit VCE= 20V, IC= 25mA 50 VCE= 10V, IC= 10mA,f=100MHz 60 nA V MHz ■ Marking Marking DA www.kexin.com.cn 1