Transistors SMD Type PNP Transistors 2SB1475 ■ Features ● Super Miniature Package ● Low collector-emitter saturation voltage ● High DC Current 1 Base 2 Emitter 3 Collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO -25 Collector - Emitter Voltage VCEO -16 Emitter - Base Voltage Unit V VEBO -6 Collector Current - Continuous IC -0.5 A Collector Power Dissipation PC 150 mW Junction Temperature Storage Temperature range TJ 150 Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= -100 uA， IE=0 -25 Typ Max V Collector- emitter breakdown voltage VCEO Ic= -1 mA, IB=0 -16 Emitter - base breakdown voltage VEBO IE= -100 uA， IC=0 -6 Collector-base cut-off current ICBO VCB= -25V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -6V , IC=0 -0.1 IC=-100 mA, IB=-10 mA -0.12 Collector-emitter saturation voltage VCE(sat) Base - emitter saturation voltage VBE(sat) Base - emitter voltage VBE DC current gain hFE Collector output capacitance Cob Transition frequency fT IC=-500 mA, IB=-20 mA -0.25 -0.4 IC=-2 A, IB=-100 mA -0.95 -1.2 VCE= -1V, IC= -10 mA -0.6 -0.7 VCE= -1V, IC= -100 mA 110 400 VCE= -1V, IC= -500 mA 100 VCB= -10V, IE= 0,f=1MHz VCE= -3V, IE = 100 mA 15 50 Unit uA V pF MHz ■ Classification of hfe(1) Type 2SB1427-B42 2SB1427-B43 2SB1427-B44 Range 110-240 190-320 270-400 Marking B42 B43 B44 www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SB1475 ■ Typical Characterisitics 2 www.kexin.com.cn Transistors SMD Type PNP Transistors 2SB1475 ■ Typical Characterisitics www.kexin.com.cn 3