Diodes SMD Type Switching Diodes BAS21,A,C,S (KAS21,A,C,S) SOT-23-3 Unit: mm Features Fast Switching Speed 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 For General Purpose Switching Applications 1 0.55 High Conductance +0.2 1.6 -0.1 +0.2 2.8 -0.1 Surface Mount Package Ideally Suited for Automatic Insertion 2 +0.02 0.15 -0.02 BAS21C 0-0.1 BAS21A BAS21 +0.1 0.68 -0.1 1.1 +0.2 -0.1 +0.1 0.95 -0.1 +0.1 1.9 -0.2 BAS21S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VR 250 V Forward Current IF 200 mA Power Dissipation PD 200 mW Operating Junction Temperature Range TJ -55 to +150 Tstg -55 to +150 Reverse V oltage Storage Temperature Range Electrical Characteristics Ta = 25 Parameter Symbol Reverse Breakdown Voltage V(BR) Testconditions IR=100 Min Typ Max 250 A Unit V IF=100mA 1.0 IF=200mA 1.25 IR VR=200V 100 nA J u n c tio n C a p ac it anc e Cj VR=0V, f=1.0MHz 5.0 pF R e v e r s e Re c o v e r T i m e Trr 50 nS Forward Voltage VF Reverse Leakage V Marking NO. BAS21 BAS21A BAS21C BAS21S Marking JS JS2 JS3 JS4 www.kexin.com.cn 1 Diodes SMD Type BAS21,A,C,S (KAS21,A,C,S) ■ Typical Characterisitics 600 300 handbook, halfpage handbook, halfpage IF (mA) IF (mA) 200 400 100 200 0 0 100 Tamb (oC) 0 200 0 1 (2) (3) VF (V) 2 (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.1 (1) Maximum permissible continuous forward current as a function of ambient temperature. Fig.2 Forward current as a function of forward voltage. 102 handbook, full pagewidth IFSM (A) 10 1 10 -1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2 www.kexin.com.cn 104 Diodes SMD Type BAS21,A,C,S (KAS21,A,C,S) ■ Typical Characterisitics 102 1.0 handbook, halfpage Cd (pF) IR (µA) 0.8 10 (1) 1 (2) 0.6 1 10 10 2 0.4 0 100 Tj (oC) 200 0.2 0 2 (1) VR = VRmax; maximum values. (2) VR = VRmax; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. 4 6 VR (V) 8 Diode capacitance as a function of reverse voltage; typical values. 300 handbook, halfpage VR (V) 200 100 0 Fig.7 0 100 Tamb (oC) 200 Maximum permissible continuous reverse voltage as a function of the ambient temperature. www.kexin.com.cn 3