SMD Type Transistors

Transistors
SMD Type
NPN Digital Transistors
DTC (R1 = R2 Series)ECA
(KDTC (R1 = R2 Series)ECA)
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
■ Features
1
● Complementary PNP Types Available
0.55
● Built-In Biasing Resistors, R1 = R2
+0.1
1.3 -0.1
+0.1
2.4 -0.1
● Epitaxial Planar Die Construction
0.4
3
2
+0.1
0.95 -0.1
+0.1
1.9 -0.1
+0.1
0.97 -0.1
+0.05
0.1 -0.01
1.IN (B)
0-0.1
IN
+0.1
0.38 -0.1
2.GND (E)
3.OUT (C)
OUT
R1
P/N
DTC123ECA (KDTC123ECA)
DTC143ECA (KDTC143ECA)
DTC114ECA (KDTC114ECA)
DTC124ECA (KDTC124ECA)
DTC144ECA (KDTC144ECA)
DTC115ECA (KDTC115ECA)
R2
GND
OUT
IN
R1, R2 (NOM) MARKING
2.2K
4.7K
10K
22K
47K
100K
N04
N08
N13
N17
N20
N24
GND
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Supply Voltage
Symbol
Rating
VCC
50
DTC123ECA
Input Voltage
Output Current
DTC143ECA
-10 to 30
-10 to 40
-10 to 40
-10 to 40
DTC123ECA
100
DTC143ECA
100
All
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature Range
IO
V
-10 to 40
DTC144ECA
DTC124ECA
Collector Power Dissipation
VIN
DTC115ECA
DTC114ECA
Output Current
-10 to 20
DTC114ECA
DTC124ECA
Unit
50
30
DTC144ECA
100
DTC115ECA
20
mA
IC(Max)
100
PC
200
mW
RθJA
625
℃/W
TJ
150
Tstg
-55 to 150
℃
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Transistors
SMD Type
NPN Digital Transistors
DTC (R1 = R2 Series)ECA
(KDTC (R1 = R2 Series)ECA)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Input Voltage
Input Voltage
Output Voltage
Input Current
VI(off)
Test Conditions
Vcc= 5V,IO= 100uA
DTC123ECA
Vo= 300mV,IO= 20mA
DTC143ECA
Vo= 300mV,IO= 20mA
DTC114ECA
DTC124ECA
VI(on)
DTC115ECA
Vo= 300mV,IO= 1mA
DTC123ECA
Io=10mA,II=0.5mA
DTC143ECA
Io=10mA,II=0.5mA
VO(on)
0.5
1.1
1.9
Vo= 300mV,IO= 5mA
Vo= 300mV,IO= 2mA
DTC124ECA
Typ
Vo= 300mV,IO= 10mA
DTC144ECA
DTC114ECA
Min
0.1
Io=10mA,II=0.5mA
Io=10mA,II=0.5mA
DTC115ECA
Io=10mA,II=0.25mA
DTC143ECA
1.8
DTC114ECA
II
0.88
V I= 5 V
0.36
Input Resistor (R1) Tolerance
Transition frequency
2
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0.15
IO(off)
VCC= 50 V , VI= 0
DTC123ECA
VO= 5V , IO=20mA
20
DTC143ECA
VO= 5V , IO=10mA
20
DTC114ECA
VO= 5V , IO=5mA
30
VO= 5V , IO=5mA
56
DTC144ECA
VO= 5V , IO=5mA
68
DTC115ECA
VO= 5V , IO=5mA
82
DTC124ECA
mA
0.18
DTC115ECA
Output Current
Resistance Ratio
0.3
3.8
DTC144ECA
DC Current Gain
3
DTC123ECA
DTC124ECA
Unit
V
Io=10mA,II=0.5mA
DTC144ECA
Max
GI
-30
△ R1
R2 / R1
fT
0.8
VCE= 10V, IE= -5mA,f=100MHz
0.5
uA
30
℅
1.2
250
MHz
Transistors
SMD Type
NPN Digital Transistors
DTC (R1 = R2 Series)ECA
(KDTC (R1 = R2 Series)ECA)
■ Typical Characterisitics
VCE(SAT), MAXIMUM COLLECTOR VOLTAGE (V)
Pd, POWER DISSIPATION (MILLIWATTS)
250
200
150
100
50
R JA = 625 °C/W
0
-50
0
50
100
150
1
IC/IB = 10
0.1
75 C
-25 C
25 C
0.01
0.001
10
0
5
75 C
25 C
-25 C
10
3
2
1
0
10
IC, COLLECTOR CURRENT (mA)
Fig. 3 DC CURRENT GAIN
100
10
5
15
30
25
20
10
V O = 0.2
75 C
25°C
10
Vin, INPUT VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
0
VR, REVERSE BIAS VOLTAGE (V)
Fig. 4 Output Capacitance
100
-25°C
1
0.1
0.01
50
4
1
1
40
30
IE = 0mA
V CE = 10
COB, CAPACITANCE (pF)
hFE, DC CURRENT GAIN (NORMALIZED)
1000
100
20
IC, COLLECTOR CURRENT (mA)
Fig. 2 VCE(SAT) vs. IC
TA, AMBIENT TEMPERATURE ( C)
Fig. 1 Derating Curve
0
1
2
3
4
5
6
7
8
9
Vin, INPUT VOLTAGE (V)
Fig. 5 Collector Current Vs. Input Voltage
10
-25°C
75 C
1
25°C
1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Fig. 6 Input Voltage vs. Collector Current
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