MOSFET SMD Type Complementary Trench MOSFET AO4618-HF (KO4618-HF) SOP-8 ■ Features Unit:mm ● N-Channel : VDS (V) = 40V ID = 8 A (VGS = 10V) 1.50 0.15 0.21 -0.02 +0.04 RDS(ON) ＜ 19mΩ (VGS = 10V) RDS(ON) ＜ 27mΩ (VGS = 4.5V) 1 S2 2 G2 3 S1 4 G1 ● P-Channel : VDS (V) = -40V ID = -7 A (VGS = -10V) 5 D1 6 D1 7 D2 8 D2 RDS(ON) ＜ 23mΩ (VGS = -10V) RDS(ON) ＜ 30mΩ (VGS = -4.5V) ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish D2 D1 G2 G1 S1 S1 N-channel P-channel ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 40 -40 Gate-Source Voltage VGS Continuous Drain Current TA=25℃ TA=70℃ ID ±20 8 -7 6 -5.5 Pulsed Drain Current IDM 40 -35 Avalanche Current IAS 15 -25 EAS 11 Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range L=0.1mH TA=25℃ TA=70℃ t ≤ 10s Steady-State PD RthJA RthJL 61 2 1.3 Unit V A mJ W 62.5 90 ℃/W 40 TJ 150 Tstg -55 to 150 ℃ www.kexin.com.cn 1 MOSFET SMD Type Complementary Trench MOSFET AO4618-HF (KO4618-HF) ■ N-Channel Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V Gate Threshold Voltage VGS(th) VDS=VGS , ID=250uA Static Drain-Source On-Resistance RDS(On) ID=250μA, VGS=0V Min Typ 40 VDS=40V, VGS=0V 1 VDS=40V, VGS=0V, TJ=55℃ 5 VGS=10V, ID=8A 1.4 gFS Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) VDS=5V, ID=8A 33 VGS=0V, VDS=20V, f=1MHz VGS=10V, VDS=20V, ID=8A 1 3.5 6.5 12 3 6 1.2 1.1 4 td(off) VGS=10V, VDS=20V, RL=2.5Ω, RGEN=3Ω tf 2 trr 12.5 Body Diode Reverse Recovery Charge Qrr Maximum Body-Diode Continuous Current 3.5 IS VSD IS=1A,VGS=0V Note : The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. ■ Marking Marking 2 4618 KA**** F www.kexin.com.cn nC ns 15 Turn-Off Fall Time IF= 8A, dI/dt= 100A/us Ω 3 Body Diode Reverse Recovery Time Diode Forward Voltage pF 11 VGS=0V, VDS=0V, f=1MHz Qgd Turn-Off DelayTime mΩ S 112 Gate Drain Charge tr V 415 Qgs td(on) 2.4 27 Gate Source Charge Turn-On DelayTime nA 19 Qg Turn-On Rise Time uA ±100 29 TJ=125℃ VGS=4.5V, ID=4A Input Capacitance Unit V VGS=10V, ID=8A Forward Transconductance Max nC 2.5 A 1 V MOSFET SMD Type Complementary Trench MOSFET AO4618-HF (KO4618-HF) ■ P-Channel Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Gate Threshold Voltage VGS(th) Test Conditions ID=-250uA, VGS=0V Min Typ -40 VDS=-40V, VGS=0V -1 VDS=-40V, VGS=0V, TJ=55℃ -5 VDS=0V, VGS=±20V VDS=VGS , ID=-250μA RDS(On) VGS=-10V, ID=-7A -1.7 gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Total Gate Charge (10V) Total Gate Charge (4.5V) Rg VDS=-5V, ID=-7A VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-20V, ID=-7A 4.5 9 32 45 8 12 7.6 Turn-On DelayTime td(on) 10 trr Qrr Maximum Body-Diode Continuous Current IS Diode Forward Voltage VGS=-10V, VDS=-20V, RL=2.8Ω, RGEN=3Ω VSD Ω nC 18 ns 38 24 tf Body Diode Reverse Recovery Charge pF 155 6.2 Body Diode Reverse Recovery Time mΩ S 185 Qgd Turn-Off Fall Time V 1870 VGS=0V, VDS=-20V, f=1MHz Gate Drain Charge tr -3 26 Qgs td(off) nA 30 Gate Source Charge Turn-Off DelayTime ±100 35 TJ=125℃ Qg Turn-On Rise Time uA 23 VGS=-4.5V, ID=- 4 A Forward Transconductance Unit V VGS=-10V, ID=-7A Static Drain-Source On-Resistance Max IF=-7A, dI/dt=500A/us 13 33 IS=-1A,VGS=0V nC -2.5 A -1 V Note : The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. www.kexin.com.cn 3 MOSFET SMD Type Complementary Trench MOSFET AO4618-HF (KO4618-HF) ■ N-Channel Typical Characterisitics 30 20 VDS=5V 4.5V 25 16 10V 3.5V 12 ID(A) ID (A) 20 15 10 8 125°C 3V 4 5 25°C VGS=2.5V 0 0 0 1 2 3 4 5 0 VDS (Volts) Fig 1: On-Region Characteristics (Note E) Normalized On-Resistance RDS(ON) (mΩ Ω) 3 4 5 6 1.8 VGS=4.5V 25 20 15 VGS=10V 10 VGS=10V ID=8A 1.6 1.4 VGS=4.5V 2 ID=4A 1.2 1 0.8 0 3 6 9 12 15 ID (A) . Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 50 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 ID=8A 45 1.0E+01 40 1.0E+00 35 30 125°C 25 IS (A) Ω) RDS(ON) (mΩ 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 30 1.0E-01 125°C 1.0E-02 25°C 1.0E-03 20 15 25°C 10 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 4 1 4 www.kexin.com.cn 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) MOSFET SMD Type Complementary Trench MOSFET AO4618-HF (KO4618-HF) ■ N-Channel Typical Characterisitics 10 400 Ciss Capacitance (pF) 8 VGS (Volts) 500 VDS=20V ID=8A 6 4 300 200 2 100 0 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics Crss 0 8 100.0 Coss 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 TA=25°C RDS(ON) limited 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 10 10s DC 1 0.0 0.01 0.1 1 VDS (Volts) 10 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 Zθ JA Normalized Transient Thermal Resistance 100 Power (W) ID (Amps) 10.0 10µs 1 100 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.1 PD 0.01 Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 100 1000 www.kexin.com.cn 5 MOSFET SMD Type Complementary Trench MOSFET AO4618-HF (KO4618-HF) ■ P-Channel Typical Characterisitics 50 40 -10V -7V 40 30 30 -3.5V -ID(A) -ID (A) VDS=-5V -4.5V 20 20 125°C 10 10 25°C VGS=-3V 0 0 0 1 2 3 4 0 5 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 40 Normalized On-Resistance 1.8 35 RDS(ON) (mΩ Ω) 1 30 VGS=-4.5V 25 VGS=-10V 20 15 10 VGS=-10V ID=-7A 1.6 1.4 1.2 VGS=-4.5V ID=-4A 1 0.8 0 5 10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 60 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 ID=-7A 1.0E+01 50 40 125°C 30 125°C 1.0E-01 25°C 1.0E-02 1.0E-03 25°C 20 -IS (A) RDS(ON) (mΩ Ω) 1.0E+00 1.0E-04 10 2 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 6 4 www.kexin.com.cn 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) MOSFET SMD Type Complementary Trench MOSFET AO4618-HF (KO4618-HF) ■ P-Channel Typical Characterisitics 10 3000 VDS=-15V ID=-7A 2500 Ciss Capacitance (pF) 8 -VGS (Volts) 2000 6 1500 4 1000 2 500 0 0 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics Coss Crss 0 35 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 100.0 TA=25°C 10µs RDS(ON) limited 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 0.1 10 10s DC 0.0 0.01 100 Power (W) -ID (Amps) 10.0 1 -VDS (Volts) 10 100 1 0.00001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 1 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.1 PD 0.01 Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.kexin.com.cn 7