MOSFET SMD Type Dual N-Channel MOSFET AO6804A-HF (KO6804A-HF) ( SOT-23-6 ) Unit: mm +0.1 0.4 -0.1 ● VDS (V) = 20V 6 5 4 1 2 3 0.4 ■ Features ● RDS(ON) ＜ 28mΩ (VGS = 4.5V) +0.2 2.8 -0.1 +0.2 1.6 -0.1 ● ID =5 A (VGS = 4.5V) ● RDS(ON) ＜ 34mΩ (VGS = 3.1V) 0.55 ● RDS(ON) ＜ 30mΩ (VGS = 4V) +0.02 0.15 -0.02 +0.01 -0.01 ● RDS(ON) ＜ 39mΩ (VGS = 2.5V) +0.2 -0.1 +0.1 1.1 -0.1 ● ESD Rating: 2000V HBM ● Pb−Free Package May be Available. The G−Suffix Denotes a 0-0.1 +0.1 0.68 -0.1 Pb−Free Lead Finish 1 S1 2 D1/D2 3 S2 4 G2 5 D1/D2 6 G1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range ID IDM TA=25℃ TA=70℃ t ≤ 10s Steady State PD RthJA RthJL Unit V 5 4 A 25 1.3 0.8 W 95 150 ℃/W 68 TJ 150 Tstg -55 to 150 ℃ www.kexin.com.cn 1 MOSFET SMD Type Dual N-Channel MOSFET AO6804A-HF (KO6804A-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 20 Gate-Source breakdown voltage BVGSO VDS=0V, IG=±250uA ±12 Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS VDS=0V, VGS=±10V VGS(th) VDS=VGS , ID=250 uA Gate Threshold Voltage Static Drain-Source On-Resistance On State Drain Current RDS(On) ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge Qg VDS=20V, VGS=0V 1 VDS=20V, VGS=0V, TJ=55℃ 5 0.5 VGS=4V, ID=4.5A 30 VGS=3.1V, ID=4.5A 34 VGS=2.5V, ID=4A 39 25 18 180 VGS=0V, VDS=0V, f=1MHz 2.7 4 5.6 7.5 18 VGS=4.5V, VDS=10V, ID=5A 172 Turn-On Rise Time tr Turn-Off DelayTime td(off) VGS=10V, VDS=10V, RL=2Ω,RG=3Ω Diode Forward Voltage VSD IF= 5A, dI/dt= 100A/us IS=1A,VGS=0V * The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. ■ Marking Marking 84** F www.kexin.com.cn ns 368 2.94 us 2.5 tf 32 kΩ nC 0.85 td(on) IS pF 95 Turn-On DelayTime Maximum Body-Diode Continuous Current S 225 VGS=0V, VDS=10V, f=1MHz 1.7 trr mΩ A Qgd Qrr V 40 Gate Drain Charge Body Diode Reverse Recovery Charge 1 28 VDS=5V, ID=5A uA uA VGS=4.5V, ID=5A TJ=125℃ VGS=4.5V, VDS=5V Unit ±10 VGS=4.5V, ID=5A Qgs Body Diode Reverse Recovery Time Max V Gate Source Charge Turn-Off Fall Time 2 Typ 43 3.2 nS nC 1.3 A 1 V MOSFET SMD Type Dual N-Channel MOSFET AO6804A-HF (KO6804A-HF) ■ Typical Characterisitics 25 25 4.5V 3V 2.5V 15 2V 20 1.8V 15 VDS= 5V ID(A) ID (A) 20 10 10 5 25°C 5 VGS=1.5V 0 125°C -40°C 0 0 1 2 3 4 5 0 0.5 VDS (Volts) Figure 1: On-Region Characteristics 2 2.5 3 Normalized On-Resistance 1.6 30 RDS(ON) (mΩ ) 1.5 VGS(Volts) Figure 2: Transfer Characteristics 32 VGS= 2.5V 28 VGS= 3.1V 26 24 VGS= 4.0V VGS= 4.5V 22 0 2 4 6 8 VGS= 4.5V ID= 5A 1.4 1.2 1.0 0.8 0.6 10 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 80 ID= 5.0A 70 1E+00 1E-01 IS (A) 60 RDS(ON) (mΩ ) 1 50 40 125°C 30 25°C 20 -40°C 10 1 2 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125°C 1E-02 1E-03 25°C 1E-04 -40°C 1E-05 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.kexin.com.cn 3 MOSFET SMD Type Dual N-Channel MOSFET AO6804A-HF (KO6804A-HF) ■ Typical Characterisitics 1000 5 VDS= 10V ID= 5A Capacitance (pF) VGS (Volts) 4 3 2 Ciss 100 Coss Crss 1 0 0 1 2 3 4 5 6 10 7 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 1000 10µs 10 RDS(ON) limited Power (W) 1 1ms 10ms 100ms TJ(Max)=150°C TA=25°C 0.01 0.1 1 10 VDS (Volts) Zθ JA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=150°C/W 10 0.1 0.00001 100 . 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 TJ(Max)=150°C TA=25°C 1 10s DC 20 100 100µs 0.1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 0.001 0.00001 Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) 4 15 VDS (Volts) Figure 8: Capacitance Characteristics 100 ID (Amps) 5 www.kexin.com.cn 100 1000