MOSFET SMD Type Dual N-Channel MOSFET SI4946DY-HF (KI4946DY-HF) SOP-8 ■ Features ● VDS (V) = 60V 1.50 0.15 ● ID = 6.5 A (VGS = 10V) 0.21 -0.02 +0.04 ● RDS(ON) ＜ 41mΩ (VGS = 10V) ● RDS(ON) ＜ 52mΩ (VGS = 4.5V) 1 Source1 2 Gate1 3 Source2 4 Gate2 ● 175 °C Maximum Junction Temperature ● Pb−Free Package May be Available. The G−Suffix Denotes a 5 Drain2 6 Drain2 7 Drain1 8 Drain1 Pb−Free Lead Finish D1 D2 G1 G2 S1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Tc=70℃ Ta=25℃ ID 5.5 5.3 4.4 Ta=70℃ Pulsed Drain Current IDM 30 Avalanche Current IAS 12 EAS 7.2 Single-Pulse Avalanche Energy L = 0.1mH Power Dissipation Ta=25℃ PD Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range mJ 2.6 2.4 W 1.7 Ta=70℃ Thermal Resistance.Junction- to-Ambient A 3.7 Tc=25℃ Tc=70℃ V 6.5 Tc=25℃ Continuous Drain Current Unit t ≤ 10 s RthJA 62.5 Steady State RthJC 41 TJ 150 Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type Dual N-Channel MOSFET SI4946DY-HF (KI4946DY-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS Gate Threshold Voltage Static Drain-Source On-Resistance On State Drain Current VGS(th) RDS(On) Test Conditions ID=250μA, VGS=0V VDS=0V, VGS=±20V VDS=VGS , ID=250μA Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Turn-On DelayTime td(on) Turn-On Rise Time tr Turn-Off DelayTime td(off) Turn-Off Fall Time Turn-On DelayTime V 52 30 S 840 VGS=0V, VDS=30V, f=1MHz pF 71 44 VGS=0V, VDS=0V, f=1MHz VDS = 30 V, VGS = 10 V, ID = 5.3 A VDS=30V, VGS=5V, ID=5.3A 3.1 9.5 17 25 9.2 12 3.3 180 VDD = 30 V, RL = 6.8 Ω ID ≅ 4.4 A, VGEN = 4.5 V, Rg = 1 Ω 30 15 tr 40 15 Body Diode Reverse Recovery Time trr 50 Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb Maximum Body-Diode Continuous Current IS IF= 4.4 A, dI/dt= 100A/μs,TJ = 25℃ 50 18 Tc = 25 °C 3.1 Pulse Diode Forward Curren ISM (Note.1) 30 Diode Forward Voltage VSD IS=2A,VGS=0V (Note.1) 1.2 Marking 4946 KA**** F www.kexin.com.cn nC ns 7 Note.1: Pulse test; pulse width ≤ 300 us, duty cycle ≤ 2 %. ns 20 VDD = 30 V, RL = 6.8 Ω ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω tf ■ Marking nC 30 td(on) td(off) Ω 3.7 45 Turn-Off DelayTime mΩ A 24 tf Turn-On Rise Time Turn-Off Fall Time 2 3 VGS=4.5V, ID=4.7A (Note.1) Ciss Rg nA 41 Input Capacitance Gate Resistance 1 uA ±100 VGS=10V, ID=5.3A (Note.1) VDS=15V, ID=5.3A (Note.1) Unit V 10 VGS=10V, VDS=5V (Note.1) Crss 60 VDS=60V, VGS=0V, TJ=55℃ gFS Coss Max 1 ID(ON) Output Capacitance Typ VDS=60V, VGS=0V Forward Transconductance Reverse Transfer Capacitance Min A V MOSFET SMD Type Dual N-Channel MOSFET SI4946DY-HF (KI4946DY-HF) ■ Typical Characterisitics 30 10 V GS = 10 V thru 5 V 8 ID - Drain Current (A) I D - Drain Current (A) 25 20 4 V 15 10 6 4 T C = 150 °C 25 °C 2 5 3 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 - 55 °C 0.5 VDS - Drain-to-Source Voltage (V) 1.5 2.0 2.5 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.100 1200 1000 0.080 C iss C - Capacitance (pF) R DS(on) - On-Resistance (mΩ) 1.0 0.060 V GS = 4.5 V 0.040 800 600 400 V GS = 10 V 0.020 200 0.000 C oss C rss 0 0 5 10 15 20 25 30 0 10 ID - Drain Current (A) 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 2.2 10 8 R DS(on) - On-Resistance V DS = 30 V (Normalized) VGS - Gate-to-Source Voltage (V) ID = 5.3 A 2.0 ID = 5.3 A 6 V DS = 48 V 4 1.8 V GS = 10 V 1.6 1.4 V GS = 4.5 V 1.2 1.0 2 0.8 0 0 4 8 12 Qg - Total Gate Charge (nC) Gate Charge 16 20 0.6 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.kexin.com.cn 3 MOSFET SMD Type Dual N-Channel MOSFET SI4946DY-HF (KI4946DY-HF) ■ Typical Characterisitics 0.10 R DS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Current (A) 30 T J = 175 °C 10 T J = 25 °C ID = 5.3 A 0.08 T J = 150 °C 0.06 0.04 T J = 25 °C 0.02 0.00 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 3.0 25 2.8 20 2.6 ID = 250 µA Power (W) VGS(th) (V) 2.4 2.2 2.0 15 10 1.8 1.6 5 1.4 1.2 - 50 . - 25 0 25 50 75 100 125 150 0 0 .0 1 175 0.1 1 TJ - Temperature (°C) Threshold Voltage 1 ms 1 10 ms 100 ms 0.1 T A = 25 °C Single Pulse 1 s 10 s DC I C - Peak Avalanche Current (A) I D - Drain Current (A) Limited by RDS(on) * 10 TA = L ·DI BV - V DD 1 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 4 1000 100 100 µs 0.01 0 .0 1 100 Single Pulse Power, Junction-to-Ambient 100 10 10 Time (s) www.kexin.com.cn 100 0 .0 0 0 0 0 1 0.00001 0.0001 TA - Time In Avalanche (s) Single Pulse Avalanche Capability 0 .0 0 1 MOSFET SMD Type Dual N-Channel MOSFET SI4946DY-HF (KI4946DY-HF) 8 4.0 7 3.5 6 3.0 5 2.5 Power (W) I D - Drain Current (A) ■ Typical Characterisitics 4 2.0 3 1.5 2 1.0 1 0.5 0.0 25 0 0 25 50 75 100 125 150 175 50 75 100 125 150 175 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 P DM 0.1 0.05 t1 t2 t1 1. Duty Cycle, D = t2 2. Per Unit Base = thJA R = 85 °C/W 0.02 3. TJM - AT = PDM Z thJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Im pedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Single Pulse 0.02 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case www.kexin.com.cn 5