Transistors SMD Type NPN Transistors 2SC3325 SOT-23-3 Unit: mm 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● Small package 1 ● Complementary to 2SA1313 0.55 ● High voltage: VCEO = 50 V (min) +0.2 1.6 -0.1 +0.2 2.8 -0.1 ■ Features 2 +0.02 0.15 -0.02 +0.2 1.1 -0.1 +0.1 0.95 -0.1 +0.1 1.9 -0.2 1. Base 0-0.1 +0.1 0.68 -0.1 2. Emitter 3. Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 500 Base Current IB 50 Collector Power Dissipation PC 200 Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature Range Unit V mA mW ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 50 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 50 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO VCB= 50 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB=10mA Base - emitter saturation voltage VBE(sat) IC=100 mA, IB=10mA VBE VCE= 1V, IC= 100mA hFE(1) VCE= 1V, IC= 100mA Base - emitter voltage DC current gain hFE(2) Collector output capacitance Cob Transition frequency fT VCE= 6V, IC= 400mA VCB= 6V, IE= 0,f=1MHz VCE= 6V, IC= 20mA V 0.1 0.8 70 25 Y 40 uA 0.25 1.2 O Unit V 1 240 7 pF 300 MHz ■ Classification of hfe(1) Type 2SC3325-O 2SC3325-Y Range 70-140 120-240 Marking CEO CEY www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SC3325 ■ Typical Characterisitics 2 www.kexin.com.cn