Transistors SMD Type NPN Transistors 2SD1619-HF 1.70 ■ Features 0.1 ● Very small size making it easy to provide highdensity, small-sized hybrid IC’s. ● Complementary to 2SB1119-HF 0.42 0.1 0.46 0.1 ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 25 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1 Collector Current - Pulse ICP 2 Collector Power Dissipation Junction Temperature Storage Temperature Range V A 0.5 PC (Note.1) Unit W 1.3 TJ 150 Tstg -55 to 150 ℃ Note.1:Mounted on ceramic board (250mm 2 ×0.8mm) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= 100 uA， IE= 0 25 Typ Max V Collector- emitter breakdown voltage VCEO Ic= 1 mA，RBE= ∞ 25 Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 5 Collector-base cut-off current ICBO VCB= 20 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 4V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB=50 mA 0.1 0.3 Base - emitter saturation voltage VBE(sat) IC=500 mA, IB=50 mA 0.85 1.2 DC current gain hFE Collector output capacitance Cob Transition frequency fT VCE= 2V, IC= 50 mA 100 VCE= 2V, IC= 1 A 40 Unit uA V 560 VCB= 10V, IE= 0,f=1MHz 15 pF VCE= 10V, IC= 50mA 180 MHz ■ Classification of hfe(1) Type 2SD1619-R-HF 2SD1619-S-HF 2SD1619-T-HF 2SD1619-U-HF Range 100-200 140-280 200-400 280-560 Marking DB R* F DB S* DB T* DB U* F F F www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SD1619-HF ■ Typical Characterisitics 2 www.kexin.com.cn Transistors SMD Type NPN Transistors 2SD1619-HF ■ Typical Characterisitics www.kexin.com.cn 3