Transistors SMD Type NPN Transistors 2SD1626 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=1.5A ● Collector Emitter Voltage VCEO=50V ● Complementary to 2SB1126 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 50 Emitter - Base Voltage VEBO 10 Collector Current - Continuous IC 1.5 Collector Current - Pulse ICP 3 Collector Power Dissipation PC (Note.1) Junction Temperature Storage Temperature Range 0.5 1.5 TJ 150 Tstg -55 to 150 Unit V A W ℃ Note.1 : Mounted on ceramic substrate of 250mm2X0.8mm ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 80 Collector- emitter breakdown voltage VCEO Ic= 1 mA，RBE= ∞ 50 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 10 Collector-base cut-off current ICBO VCB= 80 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 8V , IC=0 0.1 V Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=0.5mA 1.5 Base - emitter saturation voltage VBE(sat) IC=500mA, IB=0.5mA 2 DC current gain hFE Transition frequency fT VCE= 2V, IC=500mA 4000 VCE= 2V, IC=10mA 3000 VCE= 10V, IC=50mA Unit 120 uA V MHz ■ Marking Marking DI www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SD1626 ■ Typical Characterisitics 2 www.kexin.com.cn