Transistors SMD Type PNP Transistors CZT2955 (KZT2955) Unit:mm SOT-223 。 10 6.50±0.2 3.00±0.1 4 7.0±0.3 ● High Current ● Low Voltage 3.50±0.2 ■ Features ● Surface Mounted Power Amplifier Application 1 2 3 ● Complement to CZT3055 0.250 2.30 (typ) 1.80 (max) Gauge Plane 0.02 ~ 0.1 1.Base 2.Collector 0.70±0.1 4.60 (typ) 3.Emitter 4.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -100 Collector - Emitter Voltage VCEO -60 Emitter - Base Voltage VEBO -7 IC -6 Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Range Unit V A PC 1 W RθJA 125 ℃/W TJ 150 Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Symbol VCBO Test Conditions Min Ic= -1mA， IE= 0 -100 Ic= -30 mA， IB= 0 -60 Ic= -30 mA， IB= 0 , RBE=100Ω -70 -7 Typ Max Unit Collector- emitter breakdown voltage VCEO Emitter - base breakdown voltage VEBO IE= -1 mA， IC= 0 Collector-base cut-off current ICBO VCB= -100 V , IB= 0 -100 ICEO VCE= -30 V , IE= 0 -700 ICEV VCE= -100 V , VEB= 1.5V -1 mA IEBO VEB= -5V , IC=0 -5 mA Collector cut-off current Emitter cut-off current V Collector-emitter saturation voltage VCE(sat) IC=-4 A, IB=-400mA -1.1 Base - emitter saturation voltage VBE(sat) IC=-4 A, IB=-400mA -1.2 VBE VCE= -44V, IC= -4A -1.5 hFE(1) VCE= -4V, IC= -4A 20 hFE(2) VCE= -4V, IC= -6A 5 Base-emitter voltage DC current gain Transition frequency fT VCE= -10V, IC= -500mA,f=1MHz 2.5 uA V 70 MHz www.kexin.com.cn 1