MOSFET SMD Type N-Channel MOSFET AO4576-HF (KO4576-HF) SOP-8 Unit:mm ■ Features ● VDS (V) = 30V ● ID = 20 A (VGS = 10V) 1.50 0.15 0.21 -0.02 +0.04 ● RDS(ON) ＜ 5.8mΩ (VGS = 10V) ● RDS(ON) ＜ 9.8mΩ (VGS = 4.5V) ● Pb−Free Package May be Available. The G−Suffix Denotes a 1 2 3 4 Pb−Free Lead Finish Source Source Source Gate 5 6 7 8 Drain Drain Drain Drain D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 VDS Spike Continuous Drain Current 100ns TA=25℃ TA=70℃ Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range L=0.1mH TA=25℃ TA=70℃ t ≤ 10s Steady-State VSPIKE ID 36 12 144 IAS 25 EAS 31 RthJA V 20 IDM PD Unit 3.1 2 A mJ W 40 75 RthJL 24 TJ 150 Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO4576-HF (KO4576-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS Gate Threshold Voltage VGS(th) Test Conditions Min Typ 30 ID=250μA, VGS=0V 1 VDS=30V, VGS=0V, TJ=55℃ 5 VDS=0V, VGS=±20V VDS=VGS , ID=250uA RDS(On) VGS=10V, ID=20A 1.4 gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) Gate Source Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=12A 0.7 2.3 15.5 22.5 6.8 10.5 3 5.5 Turn-On Rise Time tr Turn-Off DelayTime td(off) Body Diode Reverse Recovery Charge Qrr IS Diode Forward Voltage VSD VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω Marking 2 4576 KC**** F www.kexin.com.cn Ω nC 3.3 ns 18 4.3 IF= 20A, dI/dt= 500A/us 12.7 17.2 IS=1A,VGS=0V Note : The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. ■ Marking pF 61 3.6 Maximum Body-Diode Continuous Current mΩ S 441 Qgd trr V 1037 td(on) Body Diode Reverse Recovery Time 2.2 91 Turn-On DelayTime tf nA 9.8 VDS=5V, ID=20A Gate Drain Charge Turn-Off Fall Time ±100 7.6 TJ=125℃ Qg Qgs uA 5.8 VGS=4.5V, ID=20A Forward Transconductance Unit V VDS=30V, VGS=0V VGS=10V, ID=20A Static Drain-Source On-Resistance Max nC 4 A 1 V MOSFET SMD Type N-Channel MOSFET AO4576-HF (KO4576-HF) ■ Typical Characterisitics 100 100 10V 4.5V 80 VDS=5V 80 5V 7V 4V 60 ID(A) ID (A) 60 40 40 125°C VGS=3V 20 0 0 0 1 2 3 4 5 0 10 Normalized On-Resistance VGS=4.5V 6 4 VGS=10V 2 0 5 10 15 20 25 4 5 6 1.2 VGS=4.5V ID=20A 1 0.8 30 0 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 14 1.0E+02 ID=20A 12 1.0E+01 10 1.0E+00 125°C 8 IS (A) RDS(ON) (mΩ Ω) 3 VGS=10V ID=20A 1.4 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 6 125°C 1.0E-01 1.0E-02 4 25°C 1.0E-03 25°C 2 0 2 1.6 8 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 0 25°C 20 1.0E-04 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO4576-HF (KO4576-HF) ■ Typical Characterisitics 10 1400 Capacitance (pF) VGS (Volts) 1200 VDS=15V ID=20A 8 6 4 2 0 Ciss 1000 800 600 Coss 400 200 0 5 10 15 0 20 Crss 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 10000 RDS(ON) 100µs 10.0 1.0 1ms DC 0.1 10ms 0.1 1000 100 10 TJ(Max)=150°C TC=25°C 0.0 0.01 TA=25°C 10µs Power (W) 100.0 ID (Amps) 5 1 10 VDS (Volts) 100 1 0.00001 . 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 Ton 0.01 0.1 1 T 10 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note F) 4 www.kexin.com.cn 100 1000