Transistors SMD Type PNP Transistors 2SB804 ■ Features 1.70 ● World standard miniature package: SOT-89 0.1 ● High collector to base voltage:VCBO ＞-100V ● Excell DC Current gain linearity. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Ratings Ta = 25 Parameter Symbol Rating Collector - Base Voltage VCBO -100 Collector - Emitter Voltage VCEO -80 Emitter - Base Voltage VEBO -5 Collector Current - Continuous -1.0 IC Collector Current -Pulse * -1.5 Collector Power Dissipation PC 2.0 Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature range Unit V A W ℃ * PW≤10 ms,duty cycle ≤50% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -100 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -80 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector cutoff current ICBO VCB= -100V， IE=0 -100 Emitter cutoff current IEBO VEB= -5V， IC=0 -100 V Collector-emitter saturation voltage *1 VCE(sat) IC=-500 mA, IB=-50mA -0.5 Base - emitter saturation voltage *1 VBE(sat) IC= -500 mA, IB=- 50mA -1.5 Base - emitter voltage *1 VBE DC current gain *1 Collector output capacitance -600 -700 hFE(1) VCE= -2.0V, IC= -100mA 90 200 hFE(2) VCE=- 2.0V, IC= -500mA 25 80 Cob Transition frequency VCE= -10V, IC= -10mA fT Unit nA V mV 400 VCE= -5.0V, IE= 0 26 pF VCE= -10V, IE= 0,f=1MHz 80 MHz *1 Pulsed:PW≤350us,duty cycle ≤2% ■ Classification of hfe(1) Type 2SB804-W 2SB804-V 2SB804-U Range 90-180 135-270 200-400 Marking AW AV AU www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SB804 ■ Typical Characterisitics 2 www.kexin.com.cn Transistors SMD Type PNP Transistors 2SB804 ■ Typical Characterisitics www.kexin.com.cn 3