MOSFET SMD Type P-Channel Enhancement MOSFET SI2325DS (KI2325DS) SOT-23 Unit: mm ■ Features +0.1 2.9 -0.1 +0.1 0.4 -0.1 ● VDS (V) =-150V ● RDS(ON) ＜ 1.3Ω (VGS =-6V) 1 0.55 ● RDS(ON) ＜ 1.2Ω (VGS =-10V) +0.1 1.3 -0.1 +0.1 2.4 -0.1 0.4 3 ● ID =-0.69A (VGS =-10V) 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 1 3 +0.1 0.97 -0.1 G +0.05 0.1 -0.01 D 1.Gate 0-0.1 2 +0.1 0.38 -0.1 2.Source S 3.Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS -150 Gate-Source Voltage VGS ±20 Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Current ID -0.53 -0.55 -0.43 -1.6 Single-Pluse Avalanche Current L=1.0mH IAS 4.5 Single-Pulse Avalanche Energy L=1.0mH EAS 1.01 Power Dissipation Ta = 25℃ Ta = 70℃ Thermal Resistance.Junction- to-Ambient t≤5 sec Steady State PD RthJA A mJ 1.25 0.75 0.8 0.48 W 100 166 RthJF 50 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 Thermal Resistance.Junction- to-Foot V -0.69 IDM Unit ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type P-Channel Enhancement MOSFET SI2325DS (KI2325DS) ■ Electrical Characteristics Ta = 25℃ Parameter VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current Test Conditions ID=-250μA, VGS=0V VDS=VGS ID=-250μA Static Drain-Source On-Resistance RDS(On) 1.2 1.3 Rg f=1.0MHz Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Qg Gate Drain Charge Qgd Turn-On DelayTime td(on) Turn-On Rise Time tr Turn-Off DelayTime td(off) Turn-Off Fall Time Maximum Body-Diode Continuous Current Diode Forward Voltage *1Pulse test: PW ≤ 300us duty cycle ≤ 2%. ■ Marking Marking D5* www.kexin.com.cn Qrr IS VSD -1.6 A 9 VGS=0V, VDS=-25V, f=1MHz *1 Ω S 2.2 340 Ω 510 pF 30 16 7.7 VGS=-10V, VDS=-75V, ID=-0.5A *1 12 nC 1.5 2.5 VGS=-10V, VDS=-75V, RL=75Ω,RGEN=6Ω ID=-1.0A *1 tf Body Diode Reverse Recovery Charge V 1.0 Gate Resistance Qgs nA -4.5 1.05 VGS=-10V, VDS=-15V μA ±100 VGS=-6V, ID=-0.5A VDS=-15V, ID=-0.5A Gate Source Charge -2.5 VGS=-10V, ID=-0.5A gFS Unit V -1 VDS=0V, VGS=±20V Total Gate Charge Max -10 IGSS ID(ON) Typ VDS=-150V, VGS=0V VGS(th) On state drain current Min -150 VDS=-150V, VGS=0V, TJ=55℃ Gate Threshold Voltage Forward Transconductance 2 Symbol Drain-Source Breakdown Voltage IF = 0.5 A, di/dt = 100 A/ s 7 11 11 17 16 25 11 17 90 135 5 sec -1.0 Steady State -0.6 IS=-1.0A,VGS=0V -0.7 -1.2 ns nC A V MOSFET SMD Type P-Channel Enhancement MOSFET SI2325DS (KI2325DS) ■ Typical Characterisitics Output Characteristics 1.6 V GS = 10 thru 5 V 1.4 1.4 1.2 I D − Drain Current (A) 1.2 I D − Drain Current (A) Transfer Characteristics 1.6 1.0 0.8 0.6 0.4 4 V 0.2 1.0 0.8 0.6 T C = 125 C 0.4 25 C 0.2 −55 C 3 V 0.0 0.0 0 2 4 6 8 10 0 1 VDS − Drain-to-Source Voltage (V) 3 4 5 VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 2.00 2 Capacitance 500 400 1.50 1.25 C − Capacitance (pF) r DS(on) − On-Resistance ( ) 1.75 V GS = 6 V 1.00 V GS = 10 V 0.75 C iss 300 200 0.50 100 C oss 0.25 C rss 0.00 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 30 90 120 150 VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) On-Resistance vs. Junction Temperature Gate Charge 10 2.5 V DS = 75 V I D = 0.5 A 8 rDS(on) − On-Resiistance (Ω) (Normalized) V GS − Gate-to-Source Voltage (V) 60 6 4 2 2.0 V GS = 10 V I D = 0.5 A 1.5 1.0 0.5 0 0 1 2 3 4 5 6 Qg − Total Gate Charge (nC) 7 8 0.0 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature ( C) www.kexin.com.cn 3 MOSFET SMD Type P-Channel Enhancement MOSFET SI2325DS (KI2325DS) ■ Typical Characterisitics Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 3.0 3 I D = 0.5 A 1 ) r DS(on) − On-Resistance ( I S − Source Current (A) 2.5 T J = 150 C T J = 25 C 1.5 1.0 0.5 0.0 0.1 0.0 2.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 VSD − Source-to-Drain Voltage (V) 4 8 10 VGS − Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 1.3 12 I D = 250 A 1.0 10 8 0.7 Power (W) V GS(th) Variance (V) 6 0.4 0.1 6 4 T A = 25 C 2 −0.2 . −0.5 −50 0 −25 0 25 50 75 100 125 150 0.1 0.01 TJ − Temperature ( C) Safe Operating Area 10 *rDS(on) Limited IDM Limited 10 s 100 s I D − Drain Current (A) 1 1 ms 0.1 10 ms I D(on) Limited 100 ms 0.01 T A = 25 C Single Pulse 10 s, 1 s dc, 100 s BV DSS Limited 0.001 0 .1 1 *VGS 4 www.kexin.com.cn 1 Time (sec) 10 100 VDS − Drain-to-Source Voltage (V) minimum VGS at which rDS(on) isspecified 1000 10 100 600 MOSFET SMD Type P-Channel Enhancement MOSFET SI2325DS (KI2325DS) ■ Typical Characterisitics Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 P DM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 120 C/W 0.02 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 −4 10 −3 10 −2 10 −1 1 10 100 600 Square Wave Pulse Duration (sec) www.kexin.com.cn 5