Transistors SMD Type PNP Transistors 2SB1000 ■ Features 1.70 0.1 ● Low frequency power amplifier ● Complementary to 2SD1366 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO -25 Collector - Emitter Voltage VCEO -20 Emitter - Base Voltage VEBO -5 IC -1 ICP -1.5 Collector Current - Continuous Collector current -Pulse (Note.1) Collector Power Dissipation PC 1 Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature range Unit V A W ℃ Note.1: PW ≤ 10ms,Duty cycle≤ 20℅ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -25 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -20 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -20V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -4V , IC=0 -0.1 Unit V uA Collector-emitter saturation voltage VCE(sat) IC=-800 mA, IB=-80mA -0.2 -0.3 Base - emitter saturation voltage VBE(sat) IC=-800 mA, IB=-80mA -0.94 -1.1 DC current gain hFE VCE= -2V, IC= -500 mA Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 38 pF VCE= -2V, IC= -500mA 200 MHz Transition frequency fT 85 V 240 ■ Classification of hfe Type 2SB1000-H 2SB1000-J Range 85-170 120-240 Marking AH AJ www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SB1000 ■ Typical Characterisitics 2 www.kexin.com.cn