MOSFET SMD Type N-Channel MOSFET AO3404A (KO3404A) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ● ID = 5.8 A (VGS = 10V) 1 ● RDS(ON) ＜ 25mΩ (VGS = 10V) 0.55 ● VDS (V) = 30V +0.1 1.3 -0.1 +0.1 2.4 -0.1 0.4 3 ■ Features 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 0-0.1 D G +0.1 0.38 -0.1 0.97 +0.1 -0.1 ● RDS(ON) ＜ 35mΩ (VGS = 4.5V) +0.05 0.1 -0.01 1. Gate 2. Source 3. Drain S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range ID IDM TA=25℃ TA=70℃ t ≤ 10s Steady-State PD RthJA RthJL Unit V 5.8 4.9 A 64 1.4 0.9 W 90 125 ℃/W 80 TJ 150 Tstg -55 to 150 ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO3404A (KO3404A) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS Gate Threshold Voltage VGS(th) Test Conditions Min Typ 30 ID=250μA, VGS=0V 1 VDS=30V, VGS=0V, TJ=55℃ 5 VDS=0V, VGS=±20V VDS=VGS , ID=250μA RDS(On) VGS=10V, ID=5.8A 1.5 ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge (10V) Total Gate Charge (4.5V) VGS=4.5V, VDS=5V VDS=5V, ID=5.8A 373 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=5.8A VGS=10V, VDS=15V, RL=2.6Ω,RG=3Ω tf Maximum Body-Diode Continuous Current IS Diode Forward Voltage 7.1 11 3.3 VSD ■ Marking Marking X4** www.kexin.com.cn Ω nC 1.4 6.5 2.4 ns 14.8 2.5 IF= 5.8A, dI/dt= 100A/us IS=1A,VGS=0V * The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. 2 2.8 4.5 trr pF 1.8 td(on) Qrr 448 41 Turn-On DelayTime Body Diode Reverse Recovery Time S 67 1.7 Body Diode Reverse Recovery Charge mΩ A Qgd Turn-Off Fall Time V 22 Gate Drain Charge tr 2.6 64 Qgs td(off) nA 35 Gate Source Charge Turn-Off DelayTime ±100 36 TJ=125℃ Qg Turn-On Rise Time uA 25 VGS=4.5V, ID=4.8A On State Drain Current Unit V VDS=30V, VGS=0V VGS=10V, ID=5.8A Static Drain-Source On-Resistance Max 10.5 12.6 4.5 nC 2.5 A 1 V MOSFET SMD Type N-Channel MOSFET AO3404A (KO3404A) ■ Typical Characterisitics 60 15 10V 50 VDS=5V 6V VDS=5V 12 9 4.5V ID(A) ID (A) 40 30 20 125°C 6 125°C VGS=3.5V 10 0 25°C 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 4.5 Normalized On-Resistance 1.8 38 RDS(ON) (mΩ Ω) 2.5 VGS(Volts) Figure 2: Transfer Characteristics 45 VGS=4.5V 31 24 17 VGS=10V 10 VGS=10V Id=5.8A 1.6 1.4 1.2 VGS=4.5V Id=4.8A 1 0.8 0.6 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1.0E+01 ID=5.8A 1.0E+00 50 1.0E-01 40 125°C IS (A) Ω) RDS(ON) (mΩ 25°C 3 30 125°C 1.0E-02 25°C 1.0E-03 20 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25°C 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO3404A (KO3404A) ■ Typical Characterisitics 600 10 VDS=15V ID=5.8A 500 Capacitance (pF) VGS (Volts) 8 6 4 300 100 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1s DC Power (W) 100µs 20 10 10s 0 0.0 0.01 0.1 1 VDS (Volts) 10 100 . Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125°C/W 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 4 30 TJ(Max)=150°C TA=25°C RDS(ON) limited 0.1 5 30 10µs 10.0 Crss 0 100.0 ID (Amps) Coss 200 2 Zθ JA Normalized Transient Thermal Resistance Ciss 400 0.0001 www.kexin.com.cn 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000