SMD Type MOSFET

MOSFET
SMD Type
P-Channel MOSFET
SI2335DS-HF (KI2335DS-HF)
SOT-23
■ Features
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
● VDS (V) =-12V
0.4
3
● RDS(ON) < 70mΩ (VGS =-2.5V)
1
● RDS(ON) < 106mΩ (VGS =-1.8V)
0.55
● RDS(ON) < 51mΩ (VGS =-4.5V)
+0.1
1.3 -0.1
+0.1
2.4 -0.1
● ID =-4.0A (VGS =-4.5V)
2
+0.1
0.95 -0.1
+0.1
1.9 -0.1
● Pb−Free Package May be Available. The G−Suffix Denotes a
+0.05
0.1 -0.01
+0.1
0.97 -0.1
Pb−Free Lead Finish
1.Gate
0-0.1
1
3
S
+0.1
0.38 -0.1
2.Source
G
3.Drain
D
2
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
VDS
-12
Gate-Source Voltage
VGS
±8
Continuous Drain Current
Ta = 25℃
Ta = 70℃
Pulsed Drain Current
Power Dissipation
ID
-4.0
Ta = 70℃
Thermal Resistance.Junction- to-Ambient t≤5 sec
Steady State
PD
RthJA
-2.6
A
-15
1.25
0.75
0.8
0.48
W
100
166
RthJF
50
Junction Temperature
TJ
150
Storage Temperature Range
Tstg
-55 to 150
Thermal Resistance.Junction- to-Foot
V
-3.2
-3.3
IDM
Ta = 25℃
Unit
℃/W
℃
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MOSFET
SMD Type
P-Channel MOSFET
SI2335DS-HF (KI2335DS-HF)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Symbol
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body leakage current
IGSS
Gate Threshold Voltage
Static Drain-Source On-Resistance *1
VGS(th)
RDS(On)
Test Conditions
ID=-250μA, VGS=0V
Min
Typ
-12
-1
VDS=-9.6V, VGS=0V, TJ=55℃
-10
VDS=0V, VGS=±8V
VDS=VGS ID=-250μA
Forward Transconductance *1
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate Source Charge
Qgs
Gate Drain Charge
Qgd
Turn-On DelayTime
td(on)
Turn-On Rise Time
tr
Turn-Off DelayTime
td(off)
Turn-Off Fall Time
tf
Maximum Body-Diode Continuous Current
Diode Forward Voltage
*1Pulse test: PW ≤ 300us duty cycle ≤ 2%.
■ Marking
Marking
2
ID(ON)
-0.45
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E5* F
nA
-1.0
V
51
VGS=-2.5V, ID=-3.5A
70
mΩ
106
VGS=-4.5V, VDS=-5V
-15
VGS=-2.5V, VDS=-5V
-6
A
7
S
1225
VGS=0V, VDS=-6V, f=1MHz
pF
260
130
9
VGS=-4.5V, VDS=-6V, ID=-4.0A
15
nC
1.9
1.5
VGS=-4.5V, VDS=-6V, RL=6Ω,RGEN=6Ω
ID=-1.0A
IS
VSD
μA
±100
VGS=-4.5V, ID=-4.0A
VDS=-5V, ID=-4.0A
Unit
V
VDS=-9.6V, VGS=0V
VGS=-1.8V, ID=-2A
On state drain current *1
Max
IS=-1.6A,VGS=0V
13
20
15
25
50
70
19
ns
35
-1.6
A
-1.2
V
MOSFET
SMD Type
P-Channel MOSFET
SI2335DS-HF (KI2335DS-HF)
■ Typical Characterisitics
Output Characteristics
15
Transfer Characteristics
15
VGS = 4.5 thru 2.5 V
TC = –55 C
12
I D – Drain Current (A)
I D – Drain Current (A)
12
2V
9
6
1.5 V
3
25 C
9
125 C
6
3
1, 0.5 V
0
0
2
4
6
8
0
0.0
10
0.5
VDS – Drain-to-Source Voltage (V)
2.5
0.25
0.20
VGS = 1.8 V
0.15
0.10
VGS = 2.5 V
1500
Ciss
1000
500
Coss
0.05
VGS = 4.5 V
0.00
Crss
0
0
3
6
9
12
15
0
3
Gate Charge
8
6
9
12
VDS – Drain-to-Source Voltage (V)
ID – Drain Current (A)
On-Resistance vs. Junction Temperature
1.6
VDS = 6 V
ID = 4.0 A
r DS(on) – On-Resistance ( )
(Normalized)
V GS – Gate-to-Source Voltage (V)
2.0
Capacitance
2000
C – Capacitance (pF)
)
r DS(on) – On-Resistance (
1.5
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.30
1.0
6
4
2
0
0
5
10
15
Qg – Total Gate Charge (nC)
20
1.4
VGS = 4.5 V
ID = 4.0 A
1.2
1.0
0.8
0.6
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature ( C)
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MOSFET
SMD Type
P-Channel MOSFET
SI2335DS-HF (KI2335DS-HF)
■ Typical Characterisitics
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
0.5
r DS(on) – On-Resistance (
I S – Source Current (A)
)
10
TJ = 150 C
TJ = 25 C
1
0.4
ID = 4.0 A
0.3
0.2
0.1
0.0
0.1
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
VSD – Source-to-Drain Voltage (V)
4
6
8
VGS – Gate-to-Source Voltage (V)
Single Pulse Power
Threshold Voltage
0.4
12
ID = 250 A
0.3
10
8
0.2
Power (W)
V GS(th) Variance (V)
2
0.1
6
0.0
4
TA = 25 C
2
–0.1
.
–0.2
–50
–25
0
25
50
75
100
125
0
150
0.01
0.1
1
TJ – Temperature ( C)
10
100
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.1
0.2
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 120 C/W
0.02
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10–4
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
4
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10
100
600
600